FDZ7064N

FDZ7064N Datasheet

FDZ7064N

Part	Datasheet
FDZ7064N	FDZ7064N (pdf)

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FDZ7064N May 2004 FDZ7064N 30V N-Channel Logic Level PowerTrench BGA MOSFET Combining Fairchild’s 30V PowerTrench process with state of the art BGA packaging, the FDZ7064N minimizes both PCB space and RDS ON . This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low RDS ON . These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS ON specifications resulting in DC/DC power supply designs with higher overall efficiency. • A, 30 V. RDS ON = VGS = V RDS ON = VGS = 10 V • Occupies only 14 mm2 of PCB area. Only 42% of the area of SO-8 • Ultra-thin package less than mm height when mounted to PCB • x 4 mm2 Footprint • High power and current handling capability. • DC/DC converters • Solenoid drive Pin 1 D DDD DD D SSS SD D SSS SD D SSS SD DGSS SD Bottom Pin 1 F7064 Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID PD TJ, Tstg Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Note 1a Pulsed Power Dissipation Steady State Note 1a Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ball Thermal Resistance, Junction-to-Case Note 1a Note 1 Note 1 Package Marking and Ordering Information Device Marking Device Reel Size 7064N FDZ7064N 13” Ratings 30 ±12 60 to +150 Tape width 12mm Units V A W °C °C/W Quantity 3000 2004 Fairchild Semiconductor Corporation FDZ7064N Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Breakdown Voltage VGS = 0 V, ID = 250 µA IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V mV/°C IGSSF Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA IGSSR VGS = V, VDS = 0 V On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient Static

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FDZ7064N

May 2004

FDZ7064N
30V N-Channel Logic Level PowerTrench BGA MOSFET

Combining Fairchild’s 30V PowerTrench process with state of the art BGA packaging, the FDZ7064N minimizes both PCB space and RDS ON . This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low RDS ON .

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS ON specifications resulting in DC/DC power supply designs with higher overall efficiency.
• A, 30 V. RDS ON = VGS = V RDS ON = VGS = 10 V
• Occupies only 14 mm2 of PCB area. Only 42% of the area of SO-8
• Ultra-thin package less than mm height when mounted to PCB
• x 4 mm2 Footprint
• High power and current handling capability.
• DC/DC converters
• Solenoid drive

Pin 1

D DDD DD D SSS SD D SSS SD D SSS SD DGSS SD

Bottom

Pin 1

F7064

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS VGSS ID

PD TJ, Tstg

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current Continuous

Note 1a

Pulsed

Power Dissipation Steady State

Note 1a

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Ball

Thermal Resistance, Junction-to-Case

Note 1a Note 1 Note 1
Package Marking and Ordering Information

Device Marking

Device

Reel Size
7064N

FDZ7064N
13”

Ratings
30 ±12 60 to +150

Tape width 12mm

Units

V A W °C
°C/W

Quantity 3000
2004 Fairchild Semiconductor Corporation

FDZ7064N

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

Breakdown Voltage VGS = 0 V, ID = 250 µA

IDSS

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V
mV/°C

IGSSF

Leakage, Forward

VGS = 12 V, VDS = 0 V
100 nA

IGSSR

VGS = V, VDS = 0 V

On Characteristics Note 2

VGS th

Gate Threshold Voltage

RDS on

Gate Threshold Voltage Temperature Coefficient

Static

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Datasheet ID: FDZ7064N 514459