FDZ4670

FDZ4670 Datasheet

FDZ4670 N-Channel BGA

Part	Datasheet
FDZ4670	FDZ4670 (pdf)

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FDZ4670 N-Channel BGA May 2007 FDZ4670 tm N-Channel BGA 30V, 25A, 2.5mΩ - Max rDS on = 2.5mΩ at VGS = 10V, ID = 25A - Max rDS on = 4.5mΩ at VGS = 4.5V, ID = 18.5A - Ultra-thin package less than 0.85mm height when mounted to - Outstanding thermal transfer characteristics - Ultra-low gate charge x rDS on product - RoHS Compliant Combining Farichild’s 30V PowerTrench process with state-ofthe-art BGA packaging, the FDZ4670 minimize both PCB space and rDS on This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handing capacity, ultra-low profile packaging, low gate charge and low rDS on . This MOSFET feature faster switching and lower gate charge than other MOSFETs with comparable rDS on specifications resulting in DC/DC power supply designs and POL converters with higher overall efficiency. - DC - DC Conversion - POL converters Index slot Bottom FLFBGA 3.5X4.0 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range Thermal Characteristics Note 1a Note 1a Note 1b Ratings 30 ±20 25 60 -55 to +150 Units V A W °C Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Package Marking and Ordering Information Note 1a Note 1b 50 100 °C/W Device Marking 4670 Device FDZ4670 Package FLFBGA 3.5X4.0 Reel Size 13’’ Tape Width 12mm Quantity 3000 units 2007 Fairchild Semiconductor Corporation FDZ4670 N-Channel BGA Electrical Characteristics TJ = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250uA, VGS = 0V ID = 250uA, referenced to 25°C mV/°C VDS = 24V, VGS = 0V VGS = ±20V, VDS = 0V ±100 nA On Characteristics VGS th Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient rDS on Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250uA ID = 250uA, referenced to 25°C VGS = 10V, ID = 25A VGS = 4.5V, ID = 18.5A VGS = 10V, ID = 25A, TJ = 125°C VDD= 10V, ID = 25A mV/°C Dynamic Characteristics Ciss Coss Crss Rg VDS = 15V, VGS = 0V, f = 1MHz f = 1MHz

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FDZ4670 N-Channel BGA

May 2007

FDZ4670 tm

N-Channel BGA
30V, 25A, 2.5mΩ
- Max rDS on = 2.5mΩ at VGS = 10V, ID = 25A - Max rDS on = 4.5mΩ at VGS = 4.5V, ID = 18.5A - Ultra-thin package less than 0.85mm height when mounted to
- Outstanding thermal transfer characteristics
- Ultra-low gate charge x rDS on product - RoHS Compliant

Combining Farichild’s 30V PowerTrench process with state-ofthe-art BGA packaging, the FDZ4670 minimize both PCB space and rDS on This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handing capacity, ultra-low profile packaging, low gate charge and low rDS on .

This MOSFET feature faster switching and lower gate charge than other MOSFETs with comparable rDS on specifications resulting in DC/DC power supply designs and POL converters with higher overall efficiency.
- DC - DC Conversion - POL converters

Index slot

Bottom

FLFBGA 3.5X4.0

MOSFET Maximum Ratings TA = 25°C unless otherwise noted

Symbol VDS VGS ID

PD TJ, TSTG

Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous
-Pulsed Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range

Thermal Characteristics

Note 1a

Note 1a Note 1b

Ratings 30 ±20 25 60
-55 to +150

Units V A

W °C

Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case
Package Marking and Ordering Information

Note 1a Note 1b
50 100
°C/W

Device Marking 4670

Device FDZ4670

Package FLFBGA 3.5X4.0

Reel Size 13’’

Tape Width 12mm

Quantity 3000 units
2007 Fairchild Semiconductor Corporation

FDZ4670 N-Channel BGA

Electrical Characteristics TJ = 25°C unless otherwise noted

Parameter

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

IDSS

IGSS

Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current

ID = 250uA, VGS = 0V

ID = 250uA, referenced to 25°C
mV/°C

VDS = 24V, VGS = 0V VGS = ±20V, VDS = 0V
±100 nA

On Characteristics

VGS th

Gate to Source Threshold Voltage

Gate to Source Threshold Voltage Temperature Coefficient
rDS on

Static Drain to Source On Resistance

Forward Transconductance

VGS = VDS, ID = 250uA

ID = 250uA, referenced to 25°C

VGS = 10V, ID = 25A VGS = 4.5V, ID = 18.5A VGS = 10V, ID = 25A, TJ = 125°C VDD= 10V, ID = 25A
mV/°C

Dynamic Characteristics

Ciss Coss Crss Rg

VDS = 15V, VGS = 0V, f = 1MHz
f = 1MHz

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Datasheet ID: FDZ4670 514453