FDZ298N

FDZ298N Datasheet

FDZ298N

Part	Datasheet
FDZ298N	FDZ298N (pdf)

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FDZ298N May 2005 FDZ298N N-Channel V Specified BGA MOSFET Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ298N minimizes both PCB space and RDS ON . This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDS ON . • Battery management • Battery protection • 6 A, 20 V RDS ON = 27 VGS = V RDS ON = 39 VGS = V • Occupies only mm2 of PCB area. Less than 50% of the area of a SSOT-6 • Ultra-thin package less than mm height when mounted to PCB • Outstanding thermal transfer characteristics 4 times better than SSOT-6 • Ultra-low Qg x RDS ON figure-of-merit • High power and current handling capability. GATE Bottom Index slot Bottom Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a PD TJ, TSTG Power Dissipation for Single Operation Note 1a Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Note 1a Package Marking and Ordering Information Device Marking Device Reel Size FDZ298N 7” Ratings 20 ±12 6 10 to +150 Tape width 8mm Units W °C °C/W Quantity 3000 units 2005 Fairchild Semiconductor Corporation FDZ298N Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Breakdown Voltage VGS = 0 V, ID = 250 µA IDSS Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V IGSS Leakage. VGS = ±12 V, VDS = 0 V ±100 nA On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient Static ID on Drain Current

PDF Datasheet Preview

FDZ298N

May 2005

FDZ298N

N-Channel V Specified BGA MOSFET

Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ298N minimizes both PCB space and RDS ON . This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDS ON .
• Battery management
• Battery protection
• 6 A, 20 V

RDS ON = 27 VGS = V RDS ON = 39 VGS = V
• Occupies only mm2 of PCB area. Less than 50% of the area of a SSOT-6
• Ultra-thin package less than mm height when mounted to PCB
• Outstanding thermal transfer characteristics 4 times better than SSOT-6
• Ultra-low Qg x RDS ON figure-of-merit
• High power and current handling capability.

GATE

Bottom

Index
slot

Bottom

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS VGSS ID

Parameter

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed

Note 1a

PD TJ, TSTG

Power Dissipation for Single Operation

Note 1a

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Note 1a
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDZ298N
7”

Ratings
20 ±12
6 10 to +150

Tape width 8mm

Units

W °C
°C/W

Quantity 3000 units
2005 Fairchild Semiconductor Corporation

FDZ298N

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

Breakdown Voltage

VGS = 0 V,

ID = 250 µA

IDSS

Zero Gate Voltage Drain Current VDS = 16 V,

VGS = 0 V

IGSS

Leakage.

VGS = ±12 V, VDS = 0 V
±100 nA

On Characteristics Note 2

VGS th

Gate Threshold Voltage

RDS on

Gate Threshold Voltage Temperature Coefficient

Static

ID on

Drain Current

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Datasheet ID: FDZ298N 514450