FDMS8670AS

FDMS8670AS Datasheet

FDMS8670AS N-Channel SyncFETTM

Part	Datasheet
FDMS8670AS	FDMS8670AS (pdf)

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FDMS8670AS N-Channel SyncFETTM May 2009 FDMS8670AS tm N-Channel 30V, 42A, 3.0m: - Max rDS on = 3.0m at VGS = 10V, ID = 23A - Max rDS on = 4.7m at VGS = 4.5V, ID = 18A - Advanced Package and Silicon combination for low rDS on and high efficiency - SyncFET Schottky Body Diode - MSL1 robust package design - RoHS Compliant The FDMS8670AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS on while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode. - Synchronous Rectifier for DC/DC Converters - Notebook Vcore/ GPU low side switch - Networking Point of Load low side switch - Telecom secondary side rectification Bottom Pin 1 S Power 56 D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous Package limited -Continuous Silicon limited -Continuous -Pulsed TC = 25°C TC = 25°C TA = 25°C Single Pulse Avalanche Energy Power Dissipation TC = 25°C Power Dissipation TA = 25°C Operating and Storage Junction Temperature Range Thermal Characteristics Note 1a Note 1a Ratings 30 ±20 42 127 23 200 384 78 -55 to +150 Units V mJ W °C RTJC RTJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information Note 1a °C/W Device Marking FDMS8670AS Device FDMS8670AS Package Power 56 Reel Size 13’’ Tape Width 12mm Quantity 3000units 2009 Fairchild Semiconductor Corporation FDMS8670AS N-Channel SyncFETTM Electrical Characteristics TJ = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS 'BVDSS IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 1mA, VGS = 0V ID = 10mA, referenced to 25°C mV/°C VDS = 24V, VGS = 0V VGS = ±20V, VDS = 0V ±100 nA On Characteristics VGS th Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient rDS on Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 1mA ID = 10mA, referenced to 25°C mV/°C VGS = 10V, ID = 23A VGS = 4.5V, ID = 18A VGS = 10V, ID = 23A, TJ = 125°C VDD = 10V, ID = 23A Dynamic Characteristics Ciss Coss Crss Rg VDS = 15V, VGS = 0V, f = 1MHz f = 1MHz 2718 3615 pF 1537 2045 pF Switching Characteristics

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FDMS8670AS N-Channel SyncFETTM

May 2009

FDMS8670AS tm

N-Channel
30V, 42A, 3.0m:
- Max rDS on = 3.0m at VGS = 10V, ID = 23A - Max rDS on = 4.7m at VGS = 4.5V, ID = 18A - Advanced Package and Silicon combination
for low rDS on and high efficiency - SyncFET Schottky Body Diode - MSL1 robust package design - RoHS Compliant

The FDMS8670AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS on while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
- Synchronous Rectifier for DC/DC Converters - Notebook Vcore/ GPU low side switch
- Networking Point of Load low side switch
- Telecom secondary side rectification

Bottom

Pin 1 S

Power 56

D5 D6 D7 D8
4G 3S 2S 1S

MOSFET Maximum Ratings TA = 25°C unless otherwise noted

Symbol VDS VGS

EAS PD TJ, TSTG

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current -Continuous Package limited -Continuous Silicon limited -Continuous -Pulsed

TC = 25°C TC = 25°C TA = 25°C

Single Pulse Avalanche Energy

Power Dissipation

TC = 25°C

Power Dissipation

TA = 25°C

Operating and Storage Junction Temperature Range

Thermal Characteristics

Note 1a Note 1a

Ratings 30 ±20 42 127 23 200 384 78
-55 to +150

Units V
mJ W °C

RTJC RTJA

Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information

Note 1a
°C/W

Device Marking FDMS8670AS

Device FDMS8670AS

Package Power 56

Reel Size 13’’

Tape Width 12mm

Quantity 3000units
2009 Fairchild Semiconductor Corporation

FDMS8670AS N-Channel SyncFETTM

Electrical Characteristics TJ = 25°C unless otherwise noted

Parameter

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS 'BVDSS IDSS IGSS

Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current

ID = 1mA, VGS = 0V

ID = 10mA, referenced to 25°C
mV/°C

VDS = 24V, VGS = 0V VGS = ±20V, VDS = 0V
±100 nA

On Characteristics

VGS th

Gate to Source Threshold Voltage

Gate to Source Threshold Voltage Temperature Coefficient
rDS on

Static Drain to Source On Resistance

Forward Transconductance

VGS = VDS, ID = 1mA

ID = 10mA, referenced to 25°C
mV/°C

VGS = 10V, ID = 23A VGS = 4.5V, ID = 18A VGS = 10V, ID = 23A, TJ = 125°C VDD = 10V, ID = 23A

Dynamic Characteristics

Ciss Coss Crss Rg

VDS = 15V, VGS = 0V, f = 1MHz
f = 1MHz
2718 3615 pF
1537 2045 pF

Switching Characteristics

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Datasheet ID: FDMS8670AS 514224