FDZ291P

FDZ291P Datasheet

FDZ291P P-Channel V Specified BGA MOSFET

Part	Datasheet
FDZ291P	FDZ291P (pdf)

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FDZ291P P-Channel V Specified BGA MOSFET February 2006 FDZ291P P-Channel V Specified BGA MOSFET Combining Fairchild’s advanced 1.5V specified PowerTrench process with state of the art BGA packaging, the FDZ291P minimizes both PCB space and RDS ON . This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDS ON . • Battery management • Load switch • Battery protection • A, V RDS ON = 40 VGS = V RDS ON = 60 VGS = V RDS ON = 160 VGS = V • Occupies only mm2 of PCB area. Less than 50% of the area of a SSOT-6 • Ultra-thin package less than mm height when mounted to PCB • Outstanding thermal transfer characteristics 4 times better than SSOT-6 • Ultra-low Qg x RDS ON figure-of-merit • High power and current handling capability. GATE Bottom Absolute Maximum Ratings TA=25oC unless otherwise noted Parameter VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Note 1a Pulsed PD TJ, TSTG Power Dissipation for Single Operation Note 1a Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1a Package Marking and Ordering Information Device Marking Device Reel Size FDZ291P 13” Ratings ±8 to +150 Tape width 8mm Units W °C °C/W Quantity 10000 units 2006 Fairchild Semiconductor Corporation FDZ291P P-Channel V Specified BGA MOSFET Electrical CharacteristicsTA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSS Leakage. VGS = 0 V, ID = µA ID = µA, Referenced to 25°C VDS = V, VGS = ±8 V, VGS = 0 V VDS = 0 V V mV/°C ±100 nA On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient Static ID on Drain Current

PDF Datasheet Preview

FDZ291P P-Channel V Specified BGA MOSFET

February 2006

FDZ291P

P-Channel V Specified BGA MOSFET

Combining Fairchild’s advanced 1.5V specified PowerTrench process with state of the art BGA packaging, the FDZ291P minimizes both PCB space and RDS ON . This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDS ON .
• Battery management
• Load switch
• Battery protection
• A, V

RDS ON = 40 VGS = V RDS ON = 60 VGS = V RDS ON = 160 VGS = V
• Occupies only mm2 of PCB area. Less than 50% of the area of a SSOT-6
• Ultra-thin package less than mm height when mounted to PCB
• Outstanding thermal transfer characteristics 4 times better than SSOT-6
• Ultra-low Qg x RDS ON figure-of-merit
• High power and current handling capability.

GATE

Bottom

Absolute Maximum Ratings TA=25oC unless otherwise noted

Parameter

VDSS VGSS ID

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Note 1a

Pulsed

PD TJ, TSTG

Power Dissipation for Single Operation

Note 1a

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Note 1a Note 1a
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDZ291P
13”

Ratings
±8 to +150

Tape width 8mm

Units

W °C
°C/W

Quantity 10000 units
2006 Fairchild Semiconductor Corporation

FDZ291P P-Channel V Specified BGA MOSFET

Electrical CharacteristicsTA = 25°C unless otherwise noted

Parameter

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

IDSS

Breakdown Voltage

Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current

IGSS

Leakage.

VGS = 0 V,

ID = µA

ID = µA, Referenced to 25°C

VDS = V, VGS = ±8 V,

VGS = 0 V VDS = 0 V

V mV/°C
±100 nA

On Characteristics Note 2

VGS th

Gate Threshold Voltage

RDS on

Gate Threshold Voltage Temperature Coefficient

Static

ID on

Drain Current

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Datasheet ID: FDZ291P 514447