FDZ2553N

FDZ2553N Datasheet

FDZ2553N

Part	Datasheet
FDZ2553N	FDZ2553N (pdf)

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FDZ2553N February 2003 FDZ2553N Monolithic Common Drain N-Channel 2.5V Specified PowerTrench BGA MOSFET Combining Fairchild’s advanced 2.5V specified PowerTrench process with state-of-the-art BGA packaging, the FDZ2553N minimizes both PCB space and RDS ON . This Monolithic Common Drain BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low RDS ON . • Battery management • Load switch • Battery protection • A, 20 V. RDS ON = 14 VGS = V RDS ON = 20 VGS = V • Occupies only cm2 of PCB area 1/3 the area of SO-8. • Ultra-thin package less than mm height when mounted to PCB. • Outstanding thermal transfer characteristics significantly better than SO-8. • Ultra-low Qg x RDS ON figure-of-merit • High power and current handling capability Pin 1 Bottom Pin 1 Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Note 1a Pulsed Power Dissipation Steady State Note 1a Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ball Thermal Resistance, Junction-to-Case Note 1a Note 1 Note 1 Package Marking and Ordering Information Device Marking Device Reel Size 2553N FDZ2553N 7’’ 2003 Fairchild Semiconductor Corporation Ratings 20 ±12 20 to +150 Tape width 12mm Units V A W °C °C/W Quantity 3000 units FDZ2553N Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Breakdown Voltage VGS = 0 V, ID = 250 µA Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C mV/°C IDSS Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V IGSSF Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA IGSSR VGS = V, VDS = 0 V On Characteristics Note 2 VGS th Gate Threshold Voltage Gate Threshold Voltage

PDF Datasheet Preview

FDZ2553N

February 2003

FDZ2553N

Monolithic Common Drain N-Channel 2.5V Specified PowerTrench BGA MOSFET

Combining Fairchild’s advanced 2.5V specified PowerTrench process with state-of-the-art BGA packaging, the FDZ2553N minimizes both PCB space and RDS ON . This Monolithic Common Drain BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low RDS ON .
• Battery management
• Load switch
• Battery protection
• A, 20 V.

RDS ON = 14 VGS = V RDS ON = 20 VGS = V
• Occupies only cm2 of PCB area 1/3 the area of SO-8.
• Ultra-thin package less than mm height when mounted to PCB.
• Outstanding thermal transfer characteristics significantly better than SO-8.
• Ultra-low Qg x RDS ON figure-of-merit
• High power and current handling capability

Pin 1

Bottom

Pin 1

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS VGSS ID

PD TJ, TSTG

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current Continuous

Note 1a

Pulsed

Power Dissipation Steady State

Note 1a

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Ball

Thermal Resistance, Junction-to-Case

Note 1a Note 1 Note 1
Package Marking and Ordering Information

Device Marking

Device

Reel Size
2553N

FDZ2553N
7’’
2003 Fairchild Semiconductor Corporation

Ratings
20 ±12 20 to +150

Tape width 12mm

Units

V A W °C
°C/W

Quantity 3000 units

FDZ2553N

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

Breakdown Voltage VGS = 0 V,

ID = 250 µA

Breakdown Voltage Temperature Coefficient

ID = 250 µA, Referenced to 25°C
mV/°C

IDSS

Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V

IGSSF

Leakage, Forward

VGS = 12 V,

VDS = 0 V
100 nA

IGSSR

VGS = V, VDS = 0 V

On Characteristics Note 2

VGS th

Gate Threshold Voltage

Gate Threshold Voltage

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Datasheet ID: FDZ2553N 514443