FDZ209N

FDZ209N Datasheet

FDZ209N

Part	Datasheet
FDZ209N	FDZ209N (pdf)

PDF Datasheet Preview
FDZ209N May 2004 FDZ209N 60V N-Channel PowerTrench BGA MOSFET Combining Fairchild’s advanced PowerTrench process with state-of-the-art BGA packaging, the FDZ209N minimizes both PCB space and RDS ON . This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low RDS ON . • Solenoid Drivers • 4 A, 60 V. RDS ON = 80 VGS = 5 V • Occupies only 5 mm2 of PCB area only 55% of the area of SSOT-6 • Ultra-thin package less than mm height when mounted to PCB • Outstanding thermal transfer characteristics 4 times better than SSOT-6 • Ultra-low Qg x RDS ON figure-of-merit • High power and current handling capability Index slot DDD SSS GSS DDD Bottom Index slot Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Note 1a Pulsed Power Dissipation Steady State Note 1a Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ball Thermal Resistance, Junction-to-Case Note 1a Note 1 Note 1 Package Marking and Ordering Information Device Marking Device Reel Size 209N FDZ209N 7’’ Ratings 60 ±20 4 20 2 to +150 Tape width 8mm Units V A W °C °C/W Quantity 3000 units 2004 Fairchild Semiconductor Corporation FDZ209N Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings Note 2 WDSS Drain-Source Avalanche Energy Single Pulse, VDD = 30 V, 90 mJ Drain-Source Avalanche Current ID= 4 A Off Characteristics BVDSS Breakdown Voltage VGS = 0 V, ID = 250 µA Breakdown Voltage Temperature ID = 250 µA, Referenced to 25°C Coefficient mV/°C IDSS Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V IGSS Leakage. VGS = ±20 V, VDS = 0 V ±100 nA On Characteristics Note 2 VGS th

PDF Datasheet Preview

FDZ209N

May 2004

FDZ209N
60V N-Channel PowerTrench BGA MOSFET

Combining Fairchild’s advanced PowerTrench process with state-of-the-art BGA packaging, the FDZ209N minimizes both PCB space and RDS ON . This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low RDS ON .
• Solenoid Drivers
• 4 A, 60 V.

RDS ON = 80 VGS = 5 V
• Occupies only 5 mm2 of PCB area only 55% of the area of SSOT-6
• Ultra-thin package less than mm height when mounted to PCB
• Outstanding thermal transfer characteristics 4 times better than SSOT-6
• Ultra-low Qg x RDS ON figure-of-merit
• High power and current handling capability

Index slot

DDD SSS GSS DDD

Bottom

Index slot

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS VGSS ID

PD TJ, TSTG

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current Continuous

Note 1a

Pulsed

Power Dissipation Steady State

Note 1a

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Ball

Thermal Resistance, Junction-to-Case

Note 1a Note 1 Note 1
Package Marking and Ordering Information

Device Marking

Device

Reel Size
209N

FDZ209N
7’’

Ratings
60 ±20
4 20 2 to +150

Tape width 8mm

Units

V A W °C
°C/W

Quantity 3000 units
2004 Fairchild Semiconductor Corporation

FDZ209N

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Drain-Source Avalanche Ratings Note 2

WDSS

Drain-Source Avalanche Energy Single Pulse, VDD = 30 V,
90 mJ

Drain-Source Avalanche Current ID= 4 A

Off Characteristics

BVDSS

Breakdown Voltage VGS = 0 V,

ID = 250 µA

Breakdown Voltage Temperature ID = 250 µA, Referenced to 25°C Coefficient
mV/°C

IDSS

Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V

IGSS

Leakage.

VGS = ±20 V, VDS = 0 V
±100 nA

On Characteristics Note 2

VGS th

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Datasheet ID: FDZ209N 514442