FGA180N33ATTU

FGA180N33ATTU Datasheet

FGA180N33AT 330V, 180A PDP Trench IGBT

Part	Datasheet
FGA180N33ATTU	FGA180N33ATTU (pdf)

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FGA180N33AT 330V, 180A PDP Trench IGBT FGA180N33AT 330V, 180A PDP Trench IGBT • High Current Capability • Low saturation voltage VCE sat =1.03V IC = 40A • High input impedance • RoHS compliant PDP SYSTEM April 2008 Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. TO-3P Absolute Maximum Ratings VCES VGES IC pulse 1 TJ Tstg TL Collector to Emitter Voltage Gate to Emitter Voltage Collector Current TC = 25oC Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature TC = 25oC TC = 25oC TC = 100oC Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds Notes 1 Repetitive test, pulse width = 100usec, Duty = * IC_pulse limited by max Tj Thermal Characteristics Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Ratings 330 ± 30 180 450 390 156 -55 to +150 -55 to +150 300 Typ. Max. Units V A W oC Units oC/W oC/W 2008 Fairchild Semiconductor Corporation FGA180N33AT 330V, 180A PDP Trench IGBT Package Marking and Ordering Information Packaging Device Marking Device FGA180N33AT FGA180N33ATTU Package TO-3P Type Tube Qty per Tube 30ea Max Qty per Box Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCES ICES IGES Collector to Emitter Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250µA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V On Characteristics VGE th G-E Threshold Voltage VCE sat Collector to Emitter Saturation Voltage IC = 250uA, VCE = VGE IC = 40A, VGE = 15V IC = 180A, VGE = 15V, IC = 180A, VGE = 15V TC = 125oC Dynamic Characteristics Cies Coes Cres VCE = 30V, VGE = 0V, f = 1MHz Switching Characteristics td on tr td off tf td on tr td off tf Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Emitter Charge Gate to Collector Charge VCC = 200V, IC = 40A, RG = VGE = 15V, Resistive Load, TC = 25oC VCC = 200V, IC = 40A, RG = VGE = 15V, Resistive Load, TC = 125oC VCE = 200V, IC = 40A, VGE = 15V ±400 3880 FGA180N33AT 330V, 180A PDP Trench IGBT Typical Performance Characteristics Figure Typical Output Characteristics

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FGA180N33AT 330V, 180A PDP Trench IGBT

FGA180N33AT
330V, 180A PDP Trench IGBT
• High Current Capability
• Low saturation voltage VCE sat =1.03V IC = 40A
• High input impedance
• RoHS compliant

PDP SYSTEM

April 2008

Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.

TO-3P

Absolute Maximum Ratings

VCES VGES IC pulse 1

TJ Tstg TL

Collector to Emitter Voltage Gate to Emitter Voltage Collector Current

TC = 25oC

Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature

TC = 25oC TC = 25oC TC = 100oC

Storage Temperature Range

Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds

Notes 1 Repetitive test, pulse width = 100usec, Duty =
* IC_pulse limited by max Tj

Thermal Characteristics

Parameter

Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient

Ratings
330 ± 30 180 450 390 156 -55 to +150 -55 to +150 300

Typ.

Max.

Units

V A W oC

Units
oC/W oC/W
2008 Fairchild Semiconductor Corporation

FGA180N33AT 330V, 180A PDP Trench IGBT
Package Marking and Ordering Information

Packaging

Device Marking

Device

FGA180N33AT

FGA180N33ATTU

Package

TO-3P

Type

Tube

Qty per Tube
30ea

Max Qty per Box

Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted

Parameter

Test Conditions

Min.

Typ. Max. Units

Off Characteristics

BVCES ICES IGES

Collector to Emitter Breakdown Voltage Collector Cut-Off Current G-E Leakage Current

VGE = 0V, IC = 250µA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V

On Characteristics

VGE th

G-E Threshold Voltage

VCE sat Collector to Emitter Saturation Voltage

IC = 250uA, VCE = VGE IC = 40A, VGE = 15V IC = 180A, VGE = 15V, IC = 180A, VGE = 15V TC = 125oC

Dynamic Characteristics

Cies Coes Cres

VCE = 30V, VGE = 0V, f = 1MHz

Switching Characteristics
td on tr td off tf td on tr td off tf Qg Qge Qgc

Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Emitter Charge Gate to Collector Charge

VCC = 200V, IC = 40A, RG = VGE = 15V, Resistive Load, TC = 25oC

VCC = 200V, IC = 40A, RG = VGE = 15V, Resistive Load, TC = 125oC

VCE = 200V, IC = 40A, VGE = 15V
±400
3880

FGA180N33AT 330V, 180A PDP Trench IGBT

Typical Performance Characteristics

Figure Typical Output Characteristics

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Datasheet ID: FGA180N33ATTU 514600