FDY2001PZ Dual P-Channel 2.5V Specified MOSFET
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FDY2001PZ Dual P-Channel 2.5V Specified MOSFET January 2006 FDY2001PZ Dual P-Channel 2.5V Specified MOSFET This Dual P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS ON VGS = 2.5v. • Li-Ion Battery Pack • 150 mA, 20 V RDS ON = 8 VGS = V RDS ON = VGS = V • ESD protection diode note 3 • RoHS Compliant S1 1 G1 2 Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Power Dissipation Steady State Note 1a Note 1a Note 1b 1 Operating and Storage Junction Temperature Range Ratings 20 ±8 150 1000 625 446 to +150 Thermal Characteristics Thermal Resistance, Junction-to-Ambient Note 1a Thermal Resistance, Junction-to-Ambient Note 1b 1 Package Marking and Ordering Information Device Marking Device Reel Size FDY2001PZ 7 ’’ 200 280 Tape width 8 mm 5 G2 4 S2 Units V mA mW °C °C/W Quantity 3000units FDY2001PZ Dual P-Channel 2.5V Specified MOSFET Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Breakdown Voltage IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSS Leakage, On Characteristics Note 2 VGS th Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient RDS on Static Forward Transconductance Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Switching Characteristics Note 2 |
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