FDW9926NZ

FDW9926NZ Datasheet

FDW9926NZ

Part	Datasheet
FDW9926NZ	FDW9926NZ (pdf)

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FDW9926NZ January 2005 FDW9926NZ Common Drain N-Channel 2.5V specified MOSFET This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 2.5V 10V . • Battery protection • Load switch • Power management • A, 20 V. RDS ON = 32 VGS = V RDS ON = 45 VGS = V • ESD protection diode note 3 • High performance trench technology for extremely low RDS ON VGS = V • Low profile TSSOP-8 package G2 S2 D2 TSSOP-8 G1 S1 D1 Pin 1 Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation Note 1a Note 1a Note 1b TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Note 1a Note 1b Package Marking and Ordering Information Device Marking Device Reel Size 9926NZ FDW9926NZ 13’’ 2005 Fairchild Semiconductor Corporation Ratings 20 ±12 30 to +150 77 114 Tape width 12mm Units V A W °C °C/W Quantity 2500 units FDW9926NZ Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Breakdown Voltage IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSS Leakage VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 16 V, VGS = 0 V VGS = ±12 V, VDS = 0 V On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient Static Forward Transconductance VDS = VGS,

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FDW9926NZ

January 2005

FDW9926NZ

Common Drain N-Channel 2.5V specified MOSFET

This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 2.5V 10V .
• Battery protection
• Load switch
• Power management
• A, 20 V. RDS ON = 32 VGS = V RDS ON = 45 VGS = V
• ESD protection diode note 3
• High performance trench technology for extremely low RDS ON VGS = V
• Low profile TSSOP-8 package

G2 S2 D2

TSSOP-8

G1 S1 D1

Pin 1

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS VGSS ID

Parameter

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed Total Power Dissipation

Note 1a

Note 1a Note 1b

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Note 1a Note 1b
Package Marking and Ordering Information

Device Marking

Device

Reel Size
9926NZ

FDW9926NZ
13’’
2005 Fairchild Semiconductor Corporation

Ratings
20 ±12 30 to +150
77 114

Tape width 12mm

Units

V A W °C
°C/W

Quantity 2500 units

FDW9926NZ

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

Breakdown Voltage

IDSS

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

IGSS

Leakage

VGS = 0 V,

ID = 250 µA

ID = 250 µA, Referenced to 25°C VDS = 16 V, VGS = 0 V VGS = ±12 V, VDS = 0 V

On Characteristics Note 2

VGS th

Gate Threshold Voltage

RDS on

Gate Threshold Voltage Temperature Coefficient

Static

Forward Transconductance

VDS = VGS,

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Datasheet ID: FDW9926NZ 514431