FDW2516NZ
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FDW2516NZ (pdf) |
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FDW2516NZ March 2003 FDW2516NZ Common Drain N-Channel 2.5V specified MOSFET This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench process to optimize the RDS ON VGS = 2.5v on special TSSOP-8 lead frame with all the drains on one side of the package. • Li-Ion Battery Pack • A, 20 V RDS ON = 30 VGS = V RDS ON = 40 VGS = V • Isolated source and drain pins • ESD protection diode note 3 • High performance trench technology for extremely low RDS ON VGS = V • Low profile TSSOP-8 package G1 S1 TSSOP-8 Pin 1 Absolute Maximum Ratings TA=25oC unless otherwise noted Parameter VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a Power Dissipation for Single Operation Note 1a Note 1b TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Note 1a Note 1b Package Marking and Ordering Information Device Marking Device Reel Size 2516NZ FDW2516NZ 13’’ Ratings 20 ±12 20 to +150 77 114 Tape width 12mm Units °C/W °C/W Quantity 3000 units 2003 Fairchild Semiconductor Corporation FDW2516NZ Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Off Characteristics BVDSS Breakdown Voltage IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSS Leakage On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient Static ID on Drain Current Forward Transconductance Dynamic Characteristics Ciss Input Capacitance Coss |
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