FDW2512NZ

FDW2512NZ Datasheet

FDW2512NZ Dual N-Channel 2.5V Specified MOSFET

Part	Datasheet
FDW2512NZ	FDW2512NZ (pdf)

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FDW2512NZ Dual N-Channel 2.5V Specified MOSFET e May 2008 FDW2512NZ Dual N-Channel 2.5V Specified MOSFET ! 6A, 20V rDS ON = VGS = 4.5V rDS ON = VGS = 2.5V ! Extended VGS range ±12 V for battery applications ! HBM ESD Protection Level of 3.5kV Typical note 3 ! High performance trench technology for extremely low rDS ON ! Low profile TSSOP-8 package ! Load switch ! Battery charge ! Battery disconnect circuits This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications. G2 S2 D2 Pin 1 TSSOP-8 S1 D1 2008 Fairchild Semiconductor Corporation FDW2512NZ Dual N-Channel 2.5V Specified MOSFET Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous TC = 25oC, VGS = 4.5V, = 77oC/W Continuous TC = 100oC, VGS = 2.5V, = 77oC/W Pulsed Power dissipation Derate above 25°C TJ, TSTG Operating and Storage Temperature Thermal Characteristics Thermal Resistance Junction to Ambient Note 1 Thermal Resistance Junction to Ambient Note 2 Package Marking and Ordering Information Device Marking 2512NZ 2 Device FDW2512NZ Package TSSOP-8 Reel Size 13” Ratings 20 ±12 Figure 4 13 -55 to 150 Units V A W mW/oC oC/W oC/W Tape Width 12 mm Quantity 2500 units Electrical Characteristics TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250µA, VGS = 0V VDS = 16V VGS = 0V TA= 100oC VGS = ±12V VGS = ±4.5V ±10 ±250 nA On Characteristics VGS TH Gate to Source Threshold Voltage rDS ON Drain to Source On Resistance VGS = VDS, ID = 250µA ID = 6.0A, VGS = 4.5V ID = 5.9A, VGS = 4.0V ID = 5.3A, VGS = 3.1V ID = 5.3A, VGS = 2.5V Dynamic Characteristics CISS COSS CRSS RG Qg TOT Qg 2.5 Qgs Qgd VDS = 10V, VGS = 0V, f = 1MHz VGS = 0.5V, f = 1MHz VGS = 0V to 4.5V VGS = 0V to 2.5V VDD = 10V ID = 6.0A Ig = 1.0mA

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FDW2512NZ Dual N-Channel 2.5V Specified MOSFET
e May 2008

FDW2512NZ Dual N-Channel 2.5V Specified MOSFET
! 6A, 20V rDS ON = VGS = 4.5V rDS ON = VGS = 2.5V
! Extended VGS range ±12 V for battery applications ! HBM ESD Protection Level of 3.5kV Typical note 3 ! High performance trench technology for extremely low
rDS ON ! Low profile TSSOP-8 package
! Load switch ! Battery charge ! Battery disconnect circuits

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications.

G2 S2 D2

Pin 1

TSSOP-8

S1 D1
2008 Fairchild Semiconductor Corporation

FDW2512NZ Dual N-Channel 2.5V Specified MOSFET

Absolute Maximum Ratings TA=25°C unless otherwise noted

Symbol VDSS VGS

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current Continuous TC = 25oC, VGS = 4.5V, = 77oC/W Continuous TC = 100oC, VGS = 2.5V, = 77oC/W Pulsed

Power dissipation

Derate above 25°C

TJ, TSTG Operating and Storage Temperature

Thermal Characteristics

Thermal Resistance Junction to Ambient Note 1 Thermal Resistance Junction to Ambient Note 2
Package Marking and Ordering Information

Device Marking 2512NZ 2

Device FDW2512NZ

Package TSSOP-8

Reel Size 13”

Ratings 20 ±12

Figure 4 13 -55 to 150

Units V

A W mW/oC
oC/W
oC/W

Tape Width 12 mm

Quantity 2500 units

Electrical Characteristics TA = 25°C unless otherwise noted

Parameter

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS Drain to Source Breakdown Voltage

IDSS

Zero Gate Voltage Drain Current

IGSS

Gate to Source Leakage Current

ID = 250µA, VGS = 0V

VDS = 16V VGS = 0V

TA= 100oC

VGS = ±12V

VGS = ±4.5V
±10
±250 nA

On Characteristics

VGS TH Gate to Source Threshold Voltage
rDS ON Drain to Source On Resistance

VGS = VDS, ID = 250µA ID = 6.0A, VGS = 4.5V ID = 5.9A, VGS = 4.0V ID = 5.3A, VGS = 3.1V ID = 5.3A, VGS = 2.5V

Dynamic Characteristics

CISS COSS CRSS RG Qg TOT Qg 2.5 Qgs Qgd

VDS = 10V, VGS = 0V, f = 1MHz

VGS = 0.5V, f = 1MHz

VGS = 0V to 4.5V

VGS = 0V to 2.5V

VDD = 10V ID = 6.0A Ig = 1.0mA

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Datasheet ID: FDW2512NZ 514416