FDW2508PB
FDW2508PB Datasheet
FDW2508PB Dual P-Channel Specified MOSFET
| Part | Datasheet |
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FDW2508PB |
FDW2508PB (pdf) |
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| FDW2508PB Dual P-Channel Specified MOSFET October 2006 FDW2508PB Dual P-Channel Specified MOSFET - Max rDS on = at VGS = ID = - Max rDS on = at VGS = ID = - Max rDS on = at VGS = ID = - Low gate charge - High performance trench technology for extremely low rDS on - Low profile TSSOP-8 package - RoHS compliant This P-Channel specified MOSFET uses Fairchild Semiconductor’s advanced low voltage It has been optimized for battery power management applications. Application - Power management - Load switch - Battery protection TSSOP8 Pin 1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation-Dual Operation Power Dissipation-Single Operation TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Note 1a Note 1a Note 1b Ratings ±8 2 1 to +150 Units V A Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Package Marking and Ordering Information Note 1a °C/W Note 1b Device Marking 2508PB Device FDW2508PB Package TSSOP-8 Reel Size 13’’ Tape Width 12mm Quantity 2500 units 2006 Fairchild Semiconductor Corporation FDW2508PB Dual P-Channel Specified MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics BVDSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = VGS = 0V ID = referenced to 25°C VDS = VGS = 0V TJ = 125°C VGS = ±8V, VDS = 0V On Characteristics Note 2 VGS th Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient rDS on Static Drain to Source On-Resistance Forward Transconductance VGS = VDS, ID = ID = referenced to 25°C VGS = ID = VGS = ID = VGS = ID = VGS = ID = = 125°C VDS = ID = Dynamic Characteristics Ciss Coss Crss |
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