FDW2508P
FDW2508P Datasheet
FDW2508P
| Part | Datasheet |
|---|---|
FDW2508P |
FDW2508P (pdf) |
| PDF Datasheet Preview |
|---|
| FDW2508P December 2001 FDW2508P Dual P-Channel V Specified MOSFET This P-Channel specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. • Power management • Load switch • Battery protection • A, V. RDS ON = 18 VGS = V RDS ON = 22 VGS = V RDS ON = 30 VGS = V • Low gate charge 26nC typical • High performance trench technology for extremely low RDS ON • Low profile TSSOP-8 package G2 S2 D2 TSSOP-8 G1 S1 D1 Pin 1 Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1 Power Dissipation for Single Operation Note 1a TJ, TSTG Note 1b Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Note 1a Note 1b Package Marking and Ordering Information Device Marking Device Reel Size 2508P FDW2508P 13’’ 1 2 3 4 Ratings ±8 1 to +150 100 125 Tape width 12mm 8 7 6 5 Units V A W °C °C/W Quantity 2500 units Fairchild Semiconductor Corporation FDW2508P Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Breakdown Voltage IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF Leakage, Forward IGSSR VGS = 0 V, ID = µA ID = µA, Referenced to 25°C VDS = V, VGS = 8 V, VGS = V, VGS = 0 V VDS = 0 V VDS = 0 V On Characteristics Note 2 VGS th Gate Threshold Voltage |
| More datasheets: 12802 | ADNK-7630 | FDS6984S | MSM4015 | MSM4012 | MSM4018 | MSM4024 | WS1105-SG1 | WS1105-TR1 | EIR405-SFP-T |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived FDW2508P Datasheet file may be downloaded here without warranties.