FDS6984S
FDS6984S Datasheet
FDS6984S
| Part | Datasheet |
|---|---|
FDS6984S |
FDS6984S (pdf) |
| PDF Datasheet Preview |
|---|
| FDS6984S September 2000 FDS6984S Dual Notebook Power Supply N-Channel SyncFET The FDS6984S is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6984S contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. The high-side switch Q1 is designed with specific emphasis on reducing switching losses while the lowside switch Q2 is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. • Q2 Optimized to minimize conduction losses Includes SyncFET Schottky diode = 8.5A, 30V RDS on = 19 VGS = 10V = RDS on = 28 VGS = 4.5V • Q1 Optimized for low switching losses Low gate charge 5 nC typical = 5.5A, 30V RDS on = VGS = 10V = RDS on = VGS = 4.5V D1 D2 SO-8 G1 S1 G2 S2 Absolute Maximum Ratings TA = 25°C unless otherwise noted Parameter VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Dual Operation Note 1a Power Dissipation for Single Operation Note 1a Note 1b Note 1c Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1 Package Marking and Ordering Information Device Marking Device Reel Size FDS6984S FDS6984S 13” ±20 ±20 -55 to +150 Units °C/W °C/W Tape width 12mm Quantity 2500 units Fairchild Semiconductor Corporation FDS6984S Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Off Characteristics BVDSS IDSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID = 1 mA VGS = 0 V, ID = 250 µA VDS = 24 V, VGS = 0 V IGSSF Gate-Body Leakage, Forward VGS = 20 V, VDS = 0 V IGSSR On Characteristics Note 2 VGS th Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient RDS on Static Drain-Source On-Resistance ID on On-State Drain Current VDS = VGS, ID = 1 mA VDS = VGS, ID = 250 µA ID = 1 mA, Referenced to 25°C ID = 250 uA, Referenced to 25°C VGS = 10 V, ID = A VGS = 10 V, ID = A, TJ = 125°C VGS = V, ID = 7 A VGS = 10 V, ID = A VGS = 10 V, ID = A, TJ = 125°C VGS = V, ID = A VGS = 10 V, VDS = 5 V |
| More datasheets: 12800 | 12806 | 12809 | 12807 | 12808 | 12804 | 12803 | 12801 | 12802 | ADNK-7630 |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived FDS6984S Datasheet file may be downloaded here without warranties.