FDW2503N

FDW2503N Datasheet

FDW2503N

Part	Datasheet
FDW2503N	FDW2503N (pdf)

PDF Datasheet Preview
FDW2503N July 2008 FDW2503N Dual N-Channel 2.5V Specified MOSFET This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 2.5V 12V . • Load switch • Motor drive • DC/DC conversion • Power management • A, 20 V. RDS ON = VGS = V RDS ON = VGS = V • Extended VGSS range ±12V for battery applications • Low gate charge • High performance trench technology for extremely low RDS ON • Low profile TSSOP-8 package G2 S2 D2 TSSOP-8 G1 S1 D1 Pin 1 Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a Power Dissipation Note 1a Note 1b TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Note 1a Note 1b Package Marking and Ordering Information Device Marking Device Reel Size 2503N FDW2503N 13’’ Fairchild Semiconductor Corporation 1 2 3 4 Ratings 20 ±12 30 -55 to +150 125 208 Tape width 12mm 8 7 6 5 Units V A W °C °C/W Quantity 2500 units FDW2503N Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Breakdown Voltage VGS = 0 V, ID = 250 µA IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 250 µA,Referenced to 25°C VDS = 16 V, VGS = 0 V IGSSF Leakage, Forward VGS = 12 V, VDS = 0 V IGSSR VGS = V VDS = 0 V mV/°C 100 nA On Characteristics Note 2 VGS th Gate Threshold Voltage

PDF Datasheet Preview

FDW2503N

July 2008

FDW2503N

Dual N-Channel 2.5V Specified MOSFET

This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 2.5V 12V .
• Load switch
• Motor drive
• DC/DC conversion
• Power management
• A, 20 V.

RDS ON = VGS = V RDS ON = VGS = V
• Extended VGSS range ±12V for battery applications
• Low gate charge
• High performance trench technology for extremely low RDS ON
• Low profile TSSOP-8 package

G2 S2 D2

TSSOP-8

G1 S1 D1

Pin 1

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS

VGSS

Parameter

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed

Note 1a

Power Dissipation

Note 1a Note 1b

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Note 1a Note 1b
Package Marking and Ordering Information

Device Marking

Device

Reel Size
2503N

FDW2503N
13’’

Fairchild Semiconductor Corporation
1 2 3 4

Ratings
20 ±12 30 -55 to +150
125 208

Tape width 12mm
8 7 6 5

Units

V A W °C
°C/W

Quantity 2500 units

FDW2503N

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

Breakdown Voltage VGS = 0 V, ID = 250 µA

IDSS

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

ID = 250 µA,Referenced to 25°C VDS = 16 V, VGS = 0 V

IGSSF

Leakage, Forward

VGS = 12 V, VDS = 0 V

IGSSR

VGS = V VDS = 0 V
mV/°C
100 nA

On Characteristics Note 2

VGS th

Gate Threshold Voltage

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived FDW2503N Datasheet file may be downloaded here without warranties.

Datasheet ID: FDW2503N 514405