FDD6670AL
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FDD6670AL (pdf) |
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FDD6670AL May 2004 FDD6670AL 30V N-Channel MOSFET This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS ON and fast switching speed. • DC/DC converter • Motor Drives • 84 A, 30 V. RDS ON = 5 VGS = 10 V RDS ON = 6 VGS = V • Low gate charge • Fast switching • High performance trench technology for extremely low RDS ON S DTO-P-2A5K2 TO-252 I-PAK TO-251AA Absolute Maximum Ratings TA=25oC unless otherwise noted Symbo l VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Power Dissipation for Single Operation Note 3 Note 1a Note 1 Note 1a Note 1b TJ, TSTG Operating and Storage Junction Temperature Range Ratings 30 ±20 84 100 83 to +175 Thermal Characteristics Thermal Resistance, Junction-to-Case Note 1 Thermal Resistance, Junction-to-Ambient Note 1a Note 1b Package Marking and Ordering Information Device Marking Device Package Reel Size FDD6670AL FDD6670AL D-PAK TO-252 13’’ Tape width 12mm Units °C °C/W Quantity 2500 units Fairchild Semiconductor Corporation FDD6670AL Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Drain-Source Avalanche Ratings Note 2 WDSS Drain-Source Avalanche Energy Single Pulse, VDD = 15 V, ID = 21A Drain-Source Avalanche Current Off Characteristics BVDSS Breakdown Voltage IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSS Leakage VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = ±20 V, VGS = 0 V VDS = 0 V On Characteristics Note 2 VGS th Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient RDS on |
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