FDV304P_NB8U003

FDV304P_NB8U003 Datasheet

FDV304P Digital FET, P-Channel

Part	Datasheet
FDV304P_NB8U003	FDV304P_NB8U003 (pdf)

Related Parts	Information
FDV304P	FDV304P
FDV304P-D87Z	FDV304P-D87Z

PDF Datasheet Preview
August 1997 FDV304P Digital FET, P-Channel This P-Channel enhancement mode field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery power applications such as notebook computers and cellular phones. This device has excellent on-state resistance even at gate drive voltages as low as volts. -25 V, A continuous, A Peak. RDS ON = VGS = V RDS ON = VGS= V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS th < 1.5V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model Compact industry standard SOT-23 surface mount package. SOT-23 Mark:304 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 Absolute Maximum Ratings TA = 25oC unless other wise noted Symbol Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage Drain Current - Continuous - Pulsed PD TJ,TSTG ESD Maximum Power Dissipation Operating and Storage Temperature Range Electrostatic Discharge Rating MIL-STD-883D Human Body Model 100pf / 1500 Ohm THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient 1997 Fairchild Semiconductor Corporation FDV304P -25 -8 -55 to 150 Units V A W °C kV °C/W Electrical Characteristics TA = 25 OC unless otherwise noted Symbol Parameter Conditions OFF CHARACTERISTICS BVDSS IDSS

PDF Datasheet Preview

August 1997

FDV304P Digital FET, P-Channel

This P-Channel enhancement mode field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery power applications such as notebook computers and cellular phones. This device has excellent on-state resistance even at gate drive voltages as low as volts.
-25 V, A continuous, A Peak.

RDS ON = VGS = V RDS ON = VGS= V.

Very low level gate drive requirements allowing direct operation in 3V circuits. VGS th < 1.5V.

Gate-Source Zener for ESD ruggedness. >6kV Human Body Model

Compact industry standard SOT-23 surface mount package.

SOT-23 Mark:304

SuperSOTTM-6

SuperSOTTM-8

SO-8

SOT-223

SOIC-16

Absolute Maximum Ratings TA = 25oC unless other wise noted

Symbol Parameter

VDSS

Drain-Source Voltage

VGSS

Gate-Source Voltage

Drain Current
- Continuous
- Pulsed

PD TJ,TSTG ESD

Maximum Power Dissipation

Operating and Storage Temperature Range

Electrostatic Discharge Rating MIL-STD-883D Human Body Model 100pf / 1500 Ohm

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient
1997 Fairchild Semiconductor Corporation

FDV304P -25 -8
-55 to 150

Units V A

W °C kV
°C/W

Electrical Characteristics TA = 25 OC unless otherwise noted

Symbol Parameter

Conditions

OFF CHARACTERISTICS

BVDSS

IDSS

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Datasheet ID: FDV304P_NB8U003 514400