FDV304P Digital FET, P-Channel
Part | Datasheet |
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FDV304P-D87Z (pdf) |
Related Parts | Information |
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FDV304P_NB8U003 |
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FDV304P |
PDF Datasheet Preview |
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August 1997 FDV304P Digital FET, P-Channel This P-Channel enhancement mode field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery power applications such as notebook computers and cellular phones. This device has excellent on-state resistance even at gate drive voltages as low as volts. -25 V, A continuous, A Peak. RDS ON = VGS = V RDS ON = VGS= V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS th < 1.5V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model Compact industry standard SOT-23 surface mount package. SOT-23 Mark:304 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 Absolute Maximum Ratings TA = 25oC unless other wise noted Symbol Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage Drain Current - Continuous - Pulsed PD TJ,TSTG ESD Maximum Power Dissipation Operating and Storage Temperature Range Electrostatic Discharge Rating MIL-STD-883D Human Body Model 100pf / 1500 Ohm THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient 1997 Fairchild Semiconductor Corporation FDV304P -25 -8 -55 to 150 Units V A W °C kV °C/W Electrical Characteristics TA = 25 OC unless otherwise noted Symbol Parameter Conditions OFF CHARACTERISTICS BVDSS IDSS |
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