FDU8770_F071

FDU8770_F071 Datasheet


FDD8770/FDU8770 N-Channel MOSFET

Part Datasheet
FDU8770_F071 FDU8770_F071 FDU8770_F071 (pdf)
Related Parts Information
FDU8770 FDU8770 FDU8770
PDF Datasheet Preview
FDD8770/FDU8770 N-Channel MOSFET

MPLEMENTATION

March 2006

FDD8770/FDU8770 N-Channel MOSFET
25V, 35A,

AD FREE I

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS on and fast switching speed.

Application
- Max rDS on = at VGS = 10V, ID = 35A - Max rDS on = at VGS = 4.5V, ID = 35A - Low gate charge Qg 10 = 52nC Typ , VGS = 10V - Low gate resistance - RoHS Compliant
- Vcore DC-DC for Desktop Computers and Servers - VRM for Intermediate Bus Architecture

I-PAK

TO-251AA

Short Lead I-PAK

MOSFET Maximum Ratings TC = 25°C unless otherwise noted

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current -Continuous Package Limited
-Continuous Die Limited
-Pulsed

EAS PD TJ, TSTG

Single Pulse Avalanche Energy Power Dissipation Operating and Storage Temperature

Thermal Characteristics

Note 1 Note 2

Thermal Resistance, Junction to Case TO-252,TO-251

Thermal Resistance, Junction to Ambient TO-252,TO-251 Thermal Resistance, Junction to Ambient TO-252,1in2 copper pad area
Package Marking and Ordering Information

Device Marking FDD8770 FDU8770

Device FDD8770 FDU8770 FDU8770_F071

Package TO-252AA TO-251AA TO-251AA

Reel Size 13’’

N/A Tube N/A Tube

Ratings 25 ±20 35 210 407 113 115
-55 to 175
100 52

Tape Width 12mm N/A N/A

Units V
mJ W °C
°C/W °C/W °C/W

Quantity 2500 units
75 units 75 units
2006 Fairchild Semiconductor Corporation

FDD8770/FDU8770 N-Channel MOSFET

Electrical Characteristics TJ = 25°C unless otherwise noted

Parameter

Test Conditions

Off Characteristics

BVDSS

IDSS

IGSS

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V

Breakdown Voltage Temperature Coefficient

ID = 250µA, referenced to 25°C

Zero Gate Voltage Drain Current Gate to Source Leakage Current

VDS = 20V, VGS = 0V

VGS = ±20V

TJ = 150°C

On Characteristics

VGS th

Gate to Source Threshold Voltage

VGS = VDS, ID = 250µA

Gate to Source Threshold Voltage Temperature Coefficient

ID = 250µA, referenced to 25°C

VGS = 10V, ID = 35A
rDS on

Drain to Source On Resistance

VGS = 4.5V, ID = 35A
More datasheets: 295-1-6352-17 | 295-1111-1REC3-5545-2 | 205-2-27172-1 | 295-1-1REC2-6084-5 | 295-1-1REC2-6084-4 | 205-1-1REC2-5815-8 | 205-1-1REC2-5815-14 | 295-3-5593-2 | 295-1-1REC2-6084-6 | FDU8770


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Datasheet ID: FDU8770_F071 514395