FDS8812NZ
FDS8812NZ Datasheet
FDS8812NZ N-Channel MOSFET
| Part | Datasheet |
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FDS8812NZ |
FDS8812NZ (pdf) |
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| FDS8812NZ N-Channel MOSFET November 2008 FDS8812NZ N-Channel MOSFET 30V, 20A, - Max rDS on = at VGS = 10V, ID = 20A - Max rDS on = at VGS = 4.5V, ID =18A - HBM ESD protection level of 6.4KV typical note 3 - High performance trench technology for extremely low rDS on - High power and current handling capability - RoHS compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. SO-8 Pin 1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Package Marking and Ordering Information Device Marking FDS8812NZ Device FDS8812NZ Reel Size 13” Note 1a Note 4 Note 1a Note 1b Ratings 30 ±20 80 661 -55 to +150 Units V A mJ W °C Note 1 Note 1a Note 1b °C/W Tape Width 12mm Quantity 2500 units 2008 Fairchild Semiconductor Corporation FDS8812NZ N-Channel MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V ID = 250µA, referenced to 25°C VDS = 24V, VGS = 0V VGS = ±20V, VDS = 0V mV/°C ±10 On Characteristics Note 2 VGS th Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient rDS on Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250µA ID = 250µA, referenced to 25°C VGS = 10V, ID = 20A VGS = 4.5V, ID = 18A VGS = 10V, ID = 20A, TJ = 125°C VDS = 5V, ID = 20A |
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