FDS8670
FDS8670 Datasheet
FDS8670 30V N-Channel MOSFET
| Part | Datasheet |
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FDS8670 |
FDS8670 (pdf) |
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| FDS8670 30V N-Channel MOSFET FDS8670 30V N-Channel MOSFET January 2008 This device has been designed specifically to improve the efficiency of DC-DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits. Very low Rds on has been maintained to provide an extremely versatile device. • High Efficiency DC-DC Converters • Notebook Vcore Power Supply • Telecom Brick Synchronous Rectifier • Multi purpose Point Of Load • 21 A, 30 V Max RDS ON = VGS = 10 V Max RDS ON = VGS = V • High performance trench technology for extremely low RDS ON and gate charge • Minimal Qgd nC typical • 100% RG tested typical • 100% UIL tested • RoHS Compliant SO-8 Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Power Dissipation Note 1a Note 1a Note 1b Note 1c EAS TJ, TSTG Single Pulse Avalanche Energy Note 3 Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1 Package Marking and Ordering Information Device Marking Device Reel Size FDS8670 FDS8670 13’’ 2008 Fairchild Semiconductor Corporation Ratings 30 ±20 21 105 1 433 to +150 50 25 Tape width 12mm Units mJ °C °C/W Quantity 2500 units FDS8670 30V N-Channel MOSFET Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Off Characteristics BVDSS Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Leakage VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V VGS = ±20 V, VDS = 0 V On Characteristics Note 2 VGS th Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient RDS on Static Forward Transconductance |
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