FDS7779Z
FDS7779Z Datasheet
FDS7779Z
| Part | Datasheet |
|---|---|
FDS7779Z |
FDS7779Z (pdf) |
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| FDS7779Z October 2003 FDS7779Z 30 Volt P-Channel MOSFET This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS ON specifications. The result is a MOSFET that is easy and safer to drive even at very high frequencies , and DC/DC power supply designs with higher overall efficiency. • A, V. RDS ON = VGS = V RDS ON = VGS = V • ESD protection diode note 3 • High performance trench technology for extremely low RDS ON • High power and current handling capability SO-8 G SS S Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Power Dissipation for Single Operation Note 1a Note 1a Note 1b Note 1c TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1 Package Marking and Ordering Information Device Marking Device Reel Size FDS7779Z FDS7779Z 13’’ Ratings ±25 1 to +150 50 25 Tape width 12mm Units °C/W Quantity 2500 units Fairchild Semiconductor Corporation FDS7779Z Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSS Leakage VGS = 0 V, ID = µA ID = µA,Referenced to 25°C VDS = V, VGS = 0 V VGS = ±20 V, VDS = 0 V On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient Static ID on Drain Current Forward Transconductance |
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