FDS7096N3

FDS7096N3 Datasheet

FDS7096N3

Part	Datasheet
FDS7096N3	FDS7096N3 (pdf)

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FDS7096N3 January 2004 FDS7096N3 30V N-Channel MOSFET This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS ON and fast switching speed. • DC/DC converter • Power management • Load switch • 14 A, 30 V RDS ON = 9 VGS = 10 V RDS ON = 12 VGS = V • High performance trench technology for extremely low RDS ON • High power and current handling capability • Fast switching • FLMP SO-8 package Enhanced thermal performance in industry-standard package size Bottom-side Drain Contact Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a Power Dissipation for Single Operation Note 1a Note 1b TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1 Package Marking and Ordering Information Device Marking Device Reel Size FDS7096N3 FDS7096N3 13’’ Fairchild Semiconductor Corporation Ratings 30 ±20 14 60 to +150 Tape width 12mm Units V A W °C °C/W Quantity 2500 units FDS7096N3 Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS Breakdown Voltage VGS = 0 V, ID = 250 µA Breakdown Voltage Temperature ID = 250 µA, Referenced to 25°C Coefficient Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V IGSS Leakage VGS = ±20 V, VDS = 0 V mV/°C ±100 nA On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient Static Forward Transconductance VDS = VGS, ID = 250 µA

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FDS7096N3

January 2004

FDS7096N3
30V N-Channel MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS ON and fast switching speed.
• DC/DC converter
• Power management
• Load switch
• 14 A, 30 V

RDS ON = 9 VGS = 10 V RDS ON = 12 VGS = V
• High performance trench technology for extremely low RDS ON
• High power and current handling capability
• Fast switching
• FLMP SO-8 package Enhanced thermal performance in industry-standard package size

Bottom-side

Drain Contact

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS VGSS ID

Parameter

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed

Note 1a

Power Dissipation for Single Operation

Note 1a

Note 1b

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Note 1a Note 1
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDS7096N3

FDS7096N3
13’’

Fairchild Semiconductor Corporation

Ratings
30 ±20 14 60 to +150

Tape width 12mm

Units

V A W °C
°C/W

Quantity 2500 units

FDS7096N3

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

IDSS

Breakdown Voltage VGS = 0 V, ID = 250 µA

Breakdown Voltage Temperature ID = 250 µA, Referenced to 25°C Coefficient

Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V

IGSS

Leakage

VGS = ±20 V, VDS = 0 V
mV/°C
±100 nA

On Characteristics Note 2

VGS th

Gate Threshold Voltage

RDS on

Gate Threshold Voltage Temperature Coefficient

Static

Forward Transconductance

VDS = VGS,

ID = 250 µA

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Datasheet ID: FDS7096N3 514368