FDS7088SN3
FDS7088SN3 Datasheet
FDS7088SN3
| Part | Datasheet |
|---|---|
FDS7088SN3 |
FDS7088SN3 (pdf) |
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| FDS7088SN3 August 2004 FDS7088SN3 30V N-Channel SyncFET The FDS7088SN3 is designed to replace a single SO-8 FLMP MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS ON and low gate charge. The FDS7088SN3 includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDS7088SN3 as the low-side switch in a synchronous rectifier is close to the performance of the FDS7088N3 in parallel with a Schottky diode. • DC/DC converter • Motor drives • 21 A, 30 V RDS ON = VGS = 10 V RDS ON = VGS = V • High performance trench technology for extremely low RDS ON • High power and current handling capability • Fast switching • FLMP SO-8 package Enhanced thermal performance in industry-standard package size Bottom-side Drain Contact Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a Power Dissipation for Single Operation Note 1a Note 1b TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1 Package Marking and Ordering Information Device Marking Device Reel Size FDS7088SN3 FDS7088SN3 13’’ Fairchild Semiconductor Corporation Ratings 30 ±20 21 60 to +150 Tape width 12mm Units °C/W °C/W Quantity 2500 units FDS7088SN3 Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Breakdown Voltage IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSS Leakage VGS = 0 V, ID = 1 mA ID = 15 mA, Referenced to 25°C VDS = 24 V, VGS = 0 V VGS = ±20 V, VDS = 0 V On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient Static Forward Transconductance VDS = VGS, ID = 1 mA ID = 15 mA, Referenced to 25°C VGS = 10 V, ID = 21 A VGS = V, ID = 19 A VGS = 10 V, ID = 21 A, TJ = 125°C VDS = 10 V, ID = 21 A Dynamic Characteristics Ciss |
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