FDS7082N3

FDS7082N3 Datasheet


FDS7082N3

Part Datasheet
FDS7082N3 FDS7082N3 FDS7082N3 (pdf)
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FDS7082N3

February 2004

FDS7082N3
30V N-Channel MOSFET

This N-Channel MOSFET in the thermally enhanced SO8 FLMP package has been designed specifically to improve the overall efficiency of DC/DC converters. Providing a balance of low RDS ON and Qg it is ideal for synchronous rectifier applications in both isolated and non-isolated topologies. It is also well suited for both high and low side switch applications in Point of Load converters.
• Secondary side Synchronous rectifier
• Synchronous Buck VRM and POL Converters
• A, 30 V RDS ON = 6 VGS = 10 V RDS ON = 8 VGS = V
• High performance trench technology for extremely low RDS ON
• Low Qg and Rg for fast switching
• FLMP SO-8 package for enhanced thermal performance in an industry-standard package outline.

Bottom-side

Drain Contact

Absolute Maximum Ratings TA=25oC unless otherwise noted

Parameter

VDSS VGSS ID

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed

Note 1a

Power Dissipation for Single Operation

Note 1a

Note 1b

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Note 1a Note 1
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDS7082N3

FDS7082N3
13’’

Fairchild Semiconductor Corporation

Ratings
30 ±20 60 to +150

Tape width 12mm

Units
°C/W °C/W

Quantity 2500 units

FDS7082N3

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

Breakdown Voltage VGS = 0 V, ID = 250 µA

Breakdown Voltage Temperature Coefficient

ID = 250 µA, Referenced to 25°C
mV/°C

IDSS

Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V

IGSS

Leakage

VGS = ± 20 V, VDS = 0 V
± 100 nA

On Characteristics Note 2

VGS th

Gate Threshold Voltage

RDS on

Gate Threshold Voltage Temperature Coefficient

Static

Forward Transconductance

VDS = VGS, ID = 250 µA

ID = 250 µA, Referenced to 25°C
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Datasheet ID: FDS7082N3 514364