FDS7066N7
FDS7066N7 Datasheet
FDS7066N7
| Part | Datasheet |
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FDS7066N7 |
FDS7066N7 (pdf) |
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| FDS7066N7 February 2004 FDS7066N7 30V N-Channel MOSFET This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS ON in a small package. • Synchronous rectifier • DC/DC converter • 23 A, 30 V RDS ON = VGS = 10 V RDS ON = VGS = V • High performance trench technology for extremely low RDS ON • High power and current handling capability • Fast switching • FLMP SO-8 package Enhanced thermal performance in industry-standard package size Bottom-side Drain Contact Absolute Maximum Ratings TA=25oC unless otherwise noted Parameter VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a Power Dissipation for Single Operation Note 1a Note 1b TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1 Package Marking and Ordering Information Device Marking Device Reel Size FDS7066N7 FDS7066N7 13’’ Fairchild Semiconductor Corporation Ratings 30 ±16 23 60 to +150 Tape width 12mm Units °C/W °C/W Quantity 2500 units FDS7066N7 Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V 30 24 mV/°C IGSSF Leakage, Forward VGS = 16 V, VDS = 0 V 100 nA IGSSR VGS = V, VDS = 0 V On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient Static Forward Transconductance |
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