FDS6982

FDS6982 Datasheet

FDS6982

Part	Datasheet
FDS6982	FDS6982 (pdf)

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FDS6982 June 1999 FDS6982 Dual N-Channel, Notebook Power Supply MOSFET This part is designed to replace two single SO-8 MOSFETs in synchronous DC:DC power supplies that provide the various peripheral voltage rails required in notebook computers and other battery powered electronic devices. FDS6982 contains two unique 30V, N-channel, logic level, MOSFETs designed to maximize power conversion efficiency. The high-side switch Q1 is designed with specific emphasis on reducing switching losses while the low-side switch Q2 is optimized for low conduction losses less than at VGS = 4.5V . Applications • Battery powered synchronous DC:DC converters. • Embedded DC:DC conversion. • Q2 8.6A, 30V. RDS on = VGS = 10V RDS on = VGS = 4.5V • Q1 6.3A, 30V. RDS on = VGS = 10V RDS on = VGS = 4.5V • Fast switching speed. • High performance trench technology for extremely low R DS ON D1 D2 SO-8 S1 G2 pin 1 S2 Absolute Maximum Ratings TA = 25°C unless otherwise noted Parameter VDSS VGSS ID PD TJ, Tstg Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Note 1a Power Dissipation for Dual Operation Power Dissipation for Single Operation Note 1a Note 1b Note 1c Operating and Storage Junction Temperature Range ±20 ±20 -55 to +150 Units Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1 Package Marking and Ordering Information Device Marking Device Reel Size FDS6982 FDS6982 13” Fairchild Semiconductor Corporation 78 40 Tape Width 12mm °C/W °C/W Quantity 2500 units FDS6982 Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Type Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage, Forward IGSSR VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V On Characteristics Note 2 VGS th Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS on Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID on On-State Drain Current ID = 250 µA, Referenced to 25°C VGS = 10 V, ID = A VGS = 10 V, ID = A, TJ = 125°C VGS = V, ID = A VGS = 10 V, ID = A VGS = 10 V, ID = A, TJ = 125°C VGS = V, ID = A VGS = 10 V, VDS = 5 V Forward Transconductance VDS = 5 V, ID = A VDS = 5 V, ID = A Dynamic Characteristics

PDF Datasheet Preview

FDS6982

June 1999

FDS6982

Dual N-Channel, Notebook Power Supply MOSFET

This part is designed to replace two single SO-8 MOSFETs in synchronous DC:DC power supplies that provide the various peripheral voltage rails required in notebook computers and other battery powered electronic devices. FDS6982 contains two unique 30V, N-channel, logic level, MOSFETs designed to maximize power conversion efficiency.

The high-side switch Q1 is designed with specific emphasis on reducing switching losses while the low-side switch Q2 is optimized for low conduction losses less than at VGS = 4.5V .

Applications
• Battery powered synchronous DC:DC converters.
• Embedded DC:DC conversion.
• Q2 8.6A, 30V. RDS on = VGS = 10V

RDS on = VGS = 4.5V
• Q1 6.3A, 30V. RDS on = VGS = 10V

RDS on = VGS = 4.5V
• Fast switching speed.
• High performance trench technology for extremely
low R DS ON

D1 D2

SO-8

S1 G2 pin 1 S2

Absolute Maximum Ratings TA = 25°C unless otherwise noted

Parameter

VDSS VGSS ID PD

TJ, Tstg

Drain-Source Voltage

Gate-Source Voltage Drain Current - Continuous
- Pulsed

Note 1a

Power Dissipation for Dual Operation Power Dissipation for Single Operation

Note 1a Note 1b

Note 1c

Operating and Storage Junction Temperature Range
±20
±20
-55 to +150

Units

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Note 1a Note 1
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDS6982

FDS6982
13”

Fairchild Semiconductor Corporation
78 40

Tape Width 12mm
°C/W °C/W

Quantity 2500 units

FDS6982

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Type Min Typ Max Units

Off Characteristics

BVDSS

Drain-Source Breakdown Voltage

IDSS

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

IGSSF

Gate-Body Leakage, Forward

IGSSR

VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V

On Characteristics Note 2

VGS th Gate Threshold Voltage

VDS = VGS, ID = 250 µA

RDS on

Gate Threshold Voltage Temperature Coefficient

Static Drain-Source On-Resistance

ID on

On-State Drain Current

ID = 250 µA, Referenced to 25°C

VGS = 10 V, ID = A VGS = 10 V, ID = A, TJ = 125°C VGS = V, ID = A VGS = 10 V, ID = A VGS = 10 V, ID = A, TJ = 125°C VGS = V, ID = A VGS = 10 V, VDS = 5 V

Forward Transconductance VDS = 5 V, ID = A

VDS = 5 V, ID = A

Dynamic Characteristics

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Datasheet ID: FDS6982 514351