FDS6961A_F011

FDS6961A_F011 Datasheet

FDS6961A Dual N-Channel Logic Level PowerTrenchTM MOSFET

Part	Datasheet
FDS6961A_F011	FDS6961A_F011 (pdf)

Related Parts	Information
FDS6961A	FDS6961A

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April 1999 FDS6961A Dual N-Channel Logic Level PowerTrenchTM MOSFET These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features A, 30 V. RDS ON = VGS = 10 V RDS ON = VGS = V. Fast switching speed. Low gate charge 2.1nC typical . High performance trench technology for extremely low RDS ON . High power and current handling capability. SOT-23 SuperSOTTM-6 SuperSOTTM-8 D2 D1 F6D9S61A SO-8 pin 1 G1 S1 SO-8 5 6 7 8 SOT-223 SOIC-16 4 3 2 1 Absolute Maximum Ratings TA = 25oC unless other wise noted Symbol Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage Drain Current - Continuous - Pulsed Note 1a Power Dissipation for Single Operation Note 1 Power Dissipation for Single Operation Note 1a Note 1b Note 1c TJ,TSTG Operating and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Note 1a Thermal Resistance, Junction-to-Case Note 1 1999 Fairchild Semiconductor Corporation Ratings 30 ±20 14 2 1 -55 to 150 78 40 Units V A W

PDF Datasheet Preview

April 1999

FDS6961A Dual N-Channel Logic Level PowerTrenchTM MOSFET

These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Features A, 30 V. RDS ON = VGS = 10 V RDS ON = VGS = V. Fast switching speed. Low gate charge 2.1nC typical .

High performance trench technology for extremely low RDS ON . High power and current handling capability.

SOT-23

SuperSOTTM-6

SuperSOTTM-8

D2 D1

F6D9S61A

SO-8
pin 1

G1 S1

SO-8
5 6 7 8

SOT-223

SOIC-16
4 3 2 1

Absolute Maximum Ratings TA = 25oC unless other wise noted

Symbol Parameter

VDSS

Drain-Source Voltage

VGSS

Gate-Source Voltage

Drain Current - Continuous
- Pulsed

Note 1a

Power Dissipation for Single Operation Note 1

Power Dissipation for Single Operation Note 1a

Note 1b

Note 1c

TJ,TSTG Operating and Storage Temperature Range

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient Note 1a

Thermal Resistance, Junction-to-Case Note 1
1999 Fairchild Semiconductor Corporation

Ratings 30 ±20 14 2 1
-55 to 150
78 40

Units V A W

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Datasheet ID: FDS6961A_F011 514350