FDS6680S

FDS6680S Datasheet

FDS6680 Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET

Part	Datasheet
FDS6680S	FDS6680S (pdf)

Related Parts	Information
FDS6680	FDS6680

PDF Datasheet Preview
April 1998 FDS6680 Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. The MOSFET features faster switching and lower gate charge than other MOSFETs with comparable RDS ON specifications. The result is a MOSFET that is easy and safer to drive even at very high frequencies , and DC/DC power supply designs with higher overall efficiency. Features A, 30 V. RDS ON = VGS = 10 V RDS ON = VGS = V. Optimized for use in switching DC/DC converters with PWM controllers. Very fast switching. Low gate charge typical Qg = 19 nC . SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 Absolute Maximum Ratings Symbol Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage Drain Current - Continuous - Pulsed TA = 25oC unless other wise noted Note 1a Power Dissipation for Single Operation Note 1a Note 1b Note 1c TJ,TSTG Operating and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Note 1a Thermal Resistance, Junction-to-Case Note 1 1998 Fairchild Semiconductor Corporation FDS6680 30 ±20 50 1 -55 to 150 50 25 Units V A °C/W °C/W Electrical Characteristics TA = 25 OC unless otherwise noted Parameter Conditions OFF CHARACTERISTICS Min Typ Max Units

PDF Datasheet Preview

April 1998

FDS6680 Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET

This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

The MOSFET features faster switching and lower gate charge than other MOSFETs with comparable RDS ON specifications.

The result is a MOSFET that is easy and safer to drive even at very high frequencies , and DC/DC power supply designs with higher overall efficiency.

Features A, 30 V. RDS ON = VGS = 10 V RDS ON = VGS = V. Optimized for use in switching DC/DC converters with PWM controllers.

Very fast switching. Low gate charge typical Qg = 19 nC .

SOT-23

SuperSOTTM-6

SuperSOTTM-8

SO-8

SOT-223

SOIC-16

Absolute Maximum Ratings

Symbol Parameter

VDSS

Drain-Source Voltage

VGSS

Gate-Source Voltage

Drain Current - Continuous
- Pulsed

TA = 25oC unless other wise noted

Note 1a

Power Dissipation for Single Operation Note 1a

Note 1b

Note 1c

TJ,TSTG Operating and Storage Temperature Range

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient Note 1a

Thermal Resistance, Junction-to-Case Note 1
1998 Fairchild Semiconductor Corporation

FDS6680 30 ±20 50 1
-55 to 150
50 25

Units V A
°C/W °C/W

Electrical Characteristics TA = 25 OC unless otherwise noted

Parameter

Conditions

OFF CHARACTERISTICS

Min Typ Max Units

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived FDS6680S Datasheet file may be downloaded here without warranties.

Datasheet ID: FDS6680S 514337