FDS6679Z

FDS6679Z Datasheet

FDS6679Z

Part	Datasheet
FDS6679Z	FDS6679Z (pdf)

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FDS6679Z October 2001 FDS6679Z 30 Volt P-Channel MOSFET This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS ON specifications. The result is a MOSFET that is easy and safer to drive even at very high frequencies , and DC/DC power supply designs with higher overall efficiency. • A, V. RDS ON = 9 VGS = V RDS ON = 13 VGS = V • Extended VGSS range for battery applications • ESD protection diode note 3 • High performance trench technology for extremely low RDS ON • High power and current handling capability SO-8 G SS S Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS V GSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a Power Dissipation for Single Operation Note 1a Note 1b Note 1c TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1 Package Marking and Ordering Information Device Marking Device Reel Size FDS6679Z FDS6679Z 13’’ 2001 Fairchild Semiconductor Corporation Ratings to +175 50 25 Units °C/W °C/W Tape width 12mm Quantity 2500 units FDS6679Z Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BV DSS Breakdown Voltage VGS = 0 V, ID = µA Breakdown Voltage Temperature Coeffic ient ID = µA,Referenced to 25°C mV/°C IDSS Zero Gate Voltage Drain Current VDS = V, VGS = 0 V IGSSF Leakage, Forward VGS = V, VDS = 0 V IGSSR VGS = 20 V, VDS = 0 V On Characteristics Note 2 V GS th Gate Threshold Voltage GS th RDS on Gate Threshold Voltage Temperature Coefficient

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FDS6679Z

October 2001

FDS6679Z
30 Volt P-Channel MOSFET

This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS ON specifications.

The result is a MOSFET that is easy and safer to drive even at very high frequencies , and DC/DC power supply designs with higher overall efficiency.
• A, V. RDS ON = 9 VGS = V RDS ON = 13 VGS = V
• Extended VGSS range for battery applications
• ESD protection diode note 3
• High performance trench technology for extremely low RDS ON
• High power and current handling capability

SO-8

G SS S

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS V GSS ID

Parameter

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed

Note 1a

Power Dissipation for Single Operation

Note 1a

Note 1b

Note 1c

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Note 1a Note 1
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDS6679Z

FDS6679Z
13’’
2001 Fairchild Semiconductor Corporation

Ratings
to +175
50 25

Units
°C/W °C/W

Tape width 12mm

Quantity 2500 units

FDS6679Z

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BV DSS

Breakdown Voltage VGS = 0 V, ID = µA

Breakdown Voltage Temperature Coeffic ient

ID = µA,Referenced to 25°C
mV/°C

IDSS

Zero Gate Voltage Drain Current

VDS = V, VGS = 0 V

IGSSF

Leakage, Forward

VGS = V, VDS = 0 V

IGSSR

VGS = 20 V, VDS = 0 V

On Characteristics Note 2

V GS th

Gate Threshold Voltage

GS th

RDS on

Gate Threshold Voltage Temperature Coefficient

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Datasheet ID: FDS6679Z 514335