FDS6673AZ
FDS6673AZ Datasheet
FDS6673AZ 30 Volt P-Channel MOSFET
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FDS6673AZ |
FDS6673AZ (pdf) |
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| FDS6673AZ 30 Volt P-Channel MOSFET April 2005 FDS6673AZ 30 Volt P-Channel MOSFET • A, V. RDS ON = VGS = V RDS ON = 11 VGS = V • Extended VGSS range for battery applications • ESD protection diode note 3 • High performance trench technology for extremely low RDS ON • High power and current handling capability This P-Channel MOSFET has been designed to improve the overall of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS ON The result is a MOSFET that is easy and safer to drive even at very high frequencies , and DC/DC power supply designs with higher overall G SS SO-8 S Absolute Maximum Ratings TA = 25°C unless otherwise noted Parameter VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Power Dissipation for Single Operation Note 1a Note 1a Note 1b Note 1c TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1 Ratings +25 to +175 50 25 Package Marking and Ordering Information Device Marking FDS6673AZ Device FDS6673AZ Reel Size 13’’ Tape width 12mm Units °C °C/W °C/W Quantity 2500 units 2005 Fairchild Semiconductor Corporation FDS6673AZ 30 Volt P-Channel MOSFET Electrical Characteristics TA = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics BVDSS Breakdown Voltage Breakdown Voltage Temperature IDSS Zero Gate Voltage Drain Current IGSS Leakage On Characteristics Note 2 VGS = 0 V, ID = µA ID = µA, Referenced to 25°C VDS = V, VGS = 0 V VGS = ±20 V, VDS = 0 V VGS th RDS on Gate Threshold Voltage Gate Threshold Voltage Temperature Static Forward Transconductance Dynamic Characteristics VDS = VGS, ID = µA ID = µA, Referenced to 25°C VGS = V, ID = A VGS = V, ID = A VGS = V, ID = TJ = 125°C VDS = V, ID = A Ciss Input Capacitance Coss |
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