FDS6064N7
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FDS6064N7 (pdf) |
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FDS6064N7 May 2003 FDS6064N7 20V N-Channel MOSFET This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS ON in a small package. • Synchronous rectifier • DC/DC converter • 23 A, 20 V. RDS ON RDS ON RDS ON = VGS = V = 4 VGS = V = 6 VGS = V • High performance trench technology for extremely low RDS ON • High power and current handling capability • Fast switching, low gate charge • FLMP SO-8 package Enhanced thermal performance in industry-standard package size Bottom-side Drain Contact Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a PD TJ, TSTG Power Dissipation Note 1a Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Package Marking and Ordering Information Device Marking Device Reel Size FDS6064N7 FDS6064N7 13’’ Ratings 20 ±8 23 60 to +150 Tape width 12mm Units V A W °C °C/W Quantity 2500 units Fairchild Semiconductor Corporation FDS6064N7 Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Breakdown Voltage VGS = 0 V, ID = 250 µA Breakdown Voltage Temperature ID = 250 µA, Referenced to 25°C Coefficient IDSS Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V IGSSF Leakage, Forward VGS = 8 V, VDS = 0 V IGSSR VGS = V , VDS = 0 V mV/°C 100 nA On Characteristics Note 2 VGS th Gate Threshold Voltage |
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