FDS5682

FDS5682 Datasheet

FDS5682 N-Channel MOSFET

Part	Datasheet
FDS5682	FDS5682 (pdf)

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FDS5682 N-Channel MOSFET May 2008 FDS5682 N-Channel MOSFET 60V, 7.5A, - rDS ON = VGS = 10V, ID = 7.5A - rDS ON = VGS = 4.5V, ID = 6.7A - High performance trench technology for extremely low rDS ON - Low gate charge This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS ON and fast switching speed. - High power and current handling capability - DC/DC converters Branding Dash SO-8 2008 Fairchild Semiconductor Corporation FDS5682 N-Channel MOSFET MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous TA = 25oC, VGS = 10V, = 50oC/W Continuous TA = 25oC, VGS = 4.5V, = 50oC/W Pulsed Single Pulse Avalanche Energy Note 1 Power dissipation Derate above 25oC TJ, TSTG Operating and Storage Temperature Thermal Characteristics Thermal Resistance, Junction to Case Note 2 Thermal Resistance, Junction to Ambient at 10 seconds Note 3 Thermal Resistance, Junction to Ambient at 1000 seconds Note 3 Package Marking and Ordering Information Device Marking FDS5682 Device FDS5682 Package SO-8 Reel Size 330mm Ratings 60 ±20 Figure 4 94 20 -55 to 150 25 50 85 Units V A mJ W mW/oC oC/W oC/W oC/W Tape Width 12mm Quantity 2500 units Electrical Characteristics TA = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250µA, VGS = 0V VDS = 50V VGS = 0V TA = 150oC - VGS = ±20V On Characteristics VGS TH Gate to Source Threshold Voltage VGS = VDS, ID = 250µA ID = 7.5A, VGS = 10V rDS ON Drain to Source On Resistance ID = 6.7A, VGS = 4.5V ID = 7.5A, VGS = 10V, TA = 150oC Dynamic Characteristics CISS COSS CRSS RG Qg TOT Qg 5 Qg TH Qgs Qgs2 Qgd VDS = 25V, VGS = 0V, f = 1MHz VGS = 0V to 10V VGS = 0V to 5V VGS = 0V to 1V VDD = 30V ID = 7.5A Ig = 1.0mA

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FDS5682 N-Channel MOSFET

May 2008

FDS5682 N-Channel MOSFET
60V, 7.5A,
- rDS ON = VGS = 10V, ID = 7.5A - rDS ON = VGS = 4.5V, ID = 6.7A - High performance trench technology for extremely low
rDS ON - Low gate charge

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS ON and fast switching speed.
- High power and current handling capability
- DC/DC converters

Branding Dash

SO-8
2008 Fairchild Semiconductor Corporation

FDS5682 N-Channel MOSFET

MOSFET Maximum Ratings TA = 25°C unless otherwise noted

Symbol VDSS VGS

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current Continuous TA = 25oC, VGS = 10V, = 50oC/W Continuous TA = 25oC, VGS = 4.5V, = 50oC/W Pulsed

Single Pulse Avalanche Energy Note 1

Power dissipation

Derate above 25oC

TJ, TSTG Operating and Storage Temperature

Thermal Characteristics

Thermal Resistance, Junction to Case Note 2 Thermal Resistance, Junction to Ambient at 10 seconds Note 3 Thermal Resistance, Junction to Ambient at 1000 seconds Note 3
Package Marking and Ordering Information

Device Marking FDS5682

Device FDS5682

Package SO-8

Reel Size 330mm

Ratings 60 ±20

Figure 4 94 20 -55 to 150
25 50 85

Units V

A mJ W mW/oC
oC/W oC/W oC/W

Tape Width 12mm

Quantity 2500 units

Electrical Characteristics TA = 25°C unless otherwise noted

Parameter

Test Conditions

Off Characteristics

BVDSS

Drain to Source Breakdown Voltage

IDSS

Zero Gate Voltage Drain Current

IGSS

Gate to Source Leakage Current

ID = 250µA, VGS = 0V

VDS = 50V VGS = 0V

TA = 150oC -

VGS = ±20V

On Characteristics

VGS TH

Gate to Source Threshold Voltage

VGS = VDS, ID = 250µA

ID = 7.5A, VGS = 10V
rDS ON

Drain to Source On Resistance

ID = 6.7A, VGS = 4.5V ID = 7.5A, VGS = 10V, TA = 150oC

Dynamic Characteristics

CISS COSS CRSS RG Qg TOT Qg 5 Qg TH Qgs Qgs2 Qgd

VDS = 25V, VGS = 0V, f = 1MHz

VGS = 0V to 10V

VGS = 0V to 5V VGS = 0V to 1V

VDD = 30V ID = 7.5A Ig = 1.0mA

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Datasheet ID: FDS5682 514321