FDS5170N7
Part | Datasheet |
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FDS5170N7 | FDS5170N7 (pdf) |
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FDS5170N7 May 2003 FDS5170N7 60V N-Channel MOSFET This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS ON in a small package. • Synchronous rectifier • DC/DC converter • A, 60 V. RDS ON = 12 VGS = 10 V RDS ON = 15 VGS = V • High performance trench technology for extremely low RDS ON • High power and current handling capability • Fast switching, low gate charge 51nC typical • FLMP SO-8 package Enhanced thermal performance in industry-standard package size Bottom-side Drain Contact Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a PD TJ, TSTG Power Dissipation for Single Operation Note 1a Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1 Package Marking and Ordering Information Device Marking Device Reel Size FDS5170N7 FDS5170N7 13’’ Ratings 60 ± 20 50 to +150 Tape width 12mm Units W °C °C/W Quantity 2500 units Fairchild Semiconductor Corporation FDS5170N7 Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings Note 2 WDSS Drain-Source Avalanche Energy Single Pulse, VDD = 30 V, ID= A Drain-Source Avalanche Current 300 mJ A Off Characteristics BVDSS Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 48 V, VGS = 0 V V mV/°C IGSS Leakage. VGS = ± 20 V, VDS = 0 V |
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