FDS5170N7

FDS5170N7 Datasheet


FDS5170N7

Part Datasheet
FDS5170N7 FDS5170N7 FDS5170N7 (pdf)
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FDS5170N7

May 2003

FDS5170N7
60V N-Channel MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS ON in a small package.
• Synchronous rectifier
• DC/DC converter
• A, 60 V. RDS ON = 12 VGS = 10 V RDS ON = 15 VGS = V
• High performance trench technology for extremely low RDS ON
• High power and current handling capability
• Fast switching, low gate charge 51nC typical
• FLMP SO-8 package Enhanced thermal performance in industry-standard package size

Bottom-side

Drain Contact

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS VGSS ID

Parameter

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed

Note 1a

PD TJ, TSTG

Power Dissipation for Single Operation

Note 1a

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Note 1a Note 1
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDS5170N7

FDS5170N7
13’’

Ratings
60 ± 20 50 to +150

Tape width 12mm

Units

W °C
°C/W

Quantity 2500 units

Fairchild Semiconductor Corporation

FDS5170N7

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Drain-Source Avalanche Ratings Note 2

WDSS

Drain-Source Avalanche Energy Single Pulse, VDD = 30 V, ID= A

Drain-Source Avalanche Current
300 mJ A

Off Characteristics

BVDSS

Breakdown Voltage

Breakdown Voltage Temperature Coefficient

IDSS

Zero Gate Voltage Drain Current

VGS = 0 V,

ID = 250 µA

ID = 250 µA, Referenced to 25°C

VDS = 48 V,

VGS = 0 V

V mV/°C

IGSS

Leakage.

VGS = ± 20 V, VDS = 0 V
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Datasheet ID: FDS5170N7 514320