FDS4935

FDS4935 Datasheet

FDS4935

Part	Datasheet
FDS4935	FDS4935 (pdf)

PDF Datasheet Preview
FDS4935 June 2001 FDS4935 Dual 30V P-Channel MOSFET This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings 4.5V 25V . • Power management • Load switch • Battery protection • A, V RDS ON = 23 VGS = V RDS ON = 35 VGS = V • Low gate charge 15nC typical • Fast switching speed • High performance trench technology for extremely low RDS ON • High power and current handling capability DD1DD1 DD2 SO-8 Pin 1 SO-8 SS2GS2SS1GG1 Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a Power Dissipation for Dual Operation Power Dissipation for Single Operation Note 1a Note 1b Note 1c TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1 Package Marking and Ordering Information Device Marking Device Reel Size FDS4935 FDS4935 13’’ Ratings ±25 2 1 to +175 78 40 Tape width 12mm Units °C/W °C/W Quantity 2500 units Fairchild Semiconductor Corporation FDS4935 Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS IGSSF IGSSR Breakdown Voltage VGS = 0 V, ID = µA Breakdown Voltage Temperature Coefficient ID = µA, Referenced to 25°C Zero Gate Voltage Drain Current VDS = V, VGS = 0 V VGS = V, VGS = 25 V, VDS = 0 V VDS = 0 V mV/°C 100 nA On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient Static VDS = VGS, ID = µA

PDF Datasheet Preview

FDS4935

June 2001

FDS4935

Dual 30V P-Channel MOSFET

This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings 4.5V 25V .
• Power management
• Load switch
• Battery protection
• A, V

RDS ON = 23 VGS = V RDS ON = 35 VGS = V
• Low gate charge 15nC typical
• Fast switching speed
• High performance trench technology for extremely low RDS ON
• High power and current handling capability

DD1DD1 DD2

SO-8

Pin 1 SO-8

SS2GS2SS1GG1

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS VGSS ID

Parameter

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed

Note 1a

Power Dissipation for Dual Operation

Power Dissipation for Single Operation

Note 1a

Note 1b

Note 1c

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Note 1a Note 1
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDS4935

FDS4935
13’’

Ratings
±25
2 1 to +175
78 40

Tape width 12mm

Units
°C/W °C/W

Quantity 2500 units

Fairchild Semiconductor Corporation

FDS4935

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

IDSS

IGSSF IGSSR

Breakdown Voltage VGS = 0 V, ID = µA

Breakdown Voltage Temperature Coefficient

ID = µA, Referenced to 25°C

Zero Gate Voltage Drain Current VDS = V, VGS = 0 V

VGS = V, VGS = 25 V,

VDS = 0 V VDS = 0 V
mV/°C
100 nA

On Characteristics Note 2

VGS th

Gate Threshold Voltage

RDS on

Gate Threshold Voltage Temperature Coefficient

Static

VDS = VGS, ID = µA

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived FDS4935 Datasheet file may be downloaded here without warranties.

Datasheet ID: FDS4935 514318