FDS4770

FDS4770 Datasheet

FDS4770

Part	Datasheet
FDS4770	FDS4770 (pdf)

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May 2004 FDS4770 FDS4770 40V N-Channel MOSFET This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS ON and fast switching speed. • DC/DC converter • A, 40 V. RDS ON = VGS = 10 V • Low gate charge • High performance trench technology for extremely low RDS ON • High power and current handling capability SO-8 Pin 1 SO-8 SS GG Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a Power Dissipation for Single Operation Note 1a Note 1b Note 1c TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1c Note 1 Package Marking and Ordering Information Device Marking Device Reel Size FDS4770 FDS4770 13’’ Ratings 40 ± 20 45 to +150 50 125 25 Tape width 11mm Units °C/W °C/W °C/W Quantity 2500 units 2004 Fairchild Semiconductor Corporation FDS4770 Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings Note 2 Drain-Source Avalanche Energy Single Pulse, VDD=20V, ID=13.2A Drain-Source Avalanche Current Off Characteristics BVDSS IDSS Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 32 V, VGS = 0 V IGSSF Leakage, Forward VGS = 20 V, VDS = 0 V IGSSR VGS = V, VDS = 0 V On Characteristics Note 2 VGS th RDS on

PDF Datasheet Preview

May 2004

FDS4770

FDS4770
40V N-Channel MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS ON and fast switching speed.
• DC/DC converter
• A, 40 V. RDS ON = VGS = 10 V
• Low gate charge
• High performance trench technology for extremely
low RDS ON
• High power and current handling capability

SO-8

Pin 1 SO-8 SS GG

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS VGSS ID

Parameter

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed

Note 1a

Power Dissipation for Single Operation

Note 1a

Note 1b

Note 1c

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Note 1a Note 1c Note 1
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDS4770

FDS4770
13’’

Ratings
40 ± 20 45 to +150
50 125 25

Tape width 11mm

Units
°C/W °C/W °C/W

Quantity 2500 units
2004 Fairchild Semiconductor Corporation

FDS4770

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Drain-Source Avalanche Ratings Note 2

Drain-Source Avalanche Energy

Single Pulse, VDD=20V, ID=13.2A

Drain-Source Avalanche Current

Off Characteristics

BVDSS

IDSS

Breakdown Voltage

Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current

VGS = 0 V, ID = 250 µA

ID = 250 µA, Referenced to 25°C

VDS = 32 V, VGS = 0 V

IGSSF

Leakage, Forward

VGS = 20 V, VDS = 0 V

IGSSR

VGS = V, VDS = 0 V

On Characteristics Note 2

VGS th

RDS on

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Datasheet ID: FDS4770 514313