FDS4488

FDS4488 Datasheet


FDS4488

Part Datasheet
FDS4488 FDS4488 FDS4488 (pdf)
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FDS4488

April 2013

FDS4488
30V N-Channel MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low inline power loss and fast switching are required.
• DC/DC converter
• Load switch
• Motor drives
• A, 30 V. RDS ON = 22 VGS = 10 V RDS ON = 30 VGS = V
• Low gate charge nC typical
• High performance trench technology for extremely low RDS ON
• High power and current handling capability

SO-8

Pin 1SO-8 SS GG

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS V GSS ID

Parameter

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed

Note 1a

Power Dissipation for Single Operation

Note 1a

Note 1b

Note 1c

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Note 1a Note 1
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDS4488

FDS4488
13’’

Ratings
30 ±25 40 to +175
50 25

Tape width 12mm

Units
°C/W

Quantity 2500 units
2001 Fairchild Semiconductor Corporation

FDS4488

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BV DSS

Breakdown Voltage VGS = 0 V, ID = 250 µA

Breakdown Voltage Temperature ID = 250 µA, Referenced to 25°C Coefficient

IDSS

Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V

IGSSF

Leakage, Forward

VGS = 25 V, VDS = 0 V

IGSSR

VGS = V, VDS = 0 V
mV/°C
100 nA

On Characteristics Note 2

V GS th

Gate Threshold Voltage

GS th

RDS on

Gate Threshold Voltage Temperature Coefficient

Static
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Datasheet ID: FDS4488 514312