FDS4072N7

FDS4072N7 Datasheet

FDS4072N7

Part	Datasheet
FDS4072N7	FDS4072N7 (pdf)

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FDS4072N7 February 2004 FDS4072N7 40V N-Channel MOSFET This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS ON in a small package. • Synchronous rectifier • DC/DC converter • A, 40 V RDS ON = 11 VGS = V RDS ON = 9 VGS = 10 V • High performance trench technology for extremely low RDS ON • High power and current handling capability • Fast switching • FLMP SO-8 package Enhanced thermal performance in industry-standard package size Bottom-side Drain Contact Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a PD TJ, TSTG Power Dissipation Note 1a Note 1b Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Package Marking and Ordering Information Device Marking Device Reel Size FDS4072N7 FDS4072N7 13’’ Fairchild Semiconductor Corporation Ratings 40 ± 12 60 to +150 Tape width 12mm Units W °C °C/W °C/W Quantity 2500 units FDS4072N7 Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings Note 2 Drain-Source Avalanche Energy Single Pulse, VDD = 20V, ID=12.4 A Drain-Source Avalanche Current 200 mJ Off Characteristics BVDSS IDSS Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF Leakage, Forward IGSSR VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 32 V, VGS = 12 V, VGS = V , VGS = 0 V VDS = 0 V VDS = 0 V 40 38 V mV/°C 100 nA

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FDS4072N7

February 2004

FDS4072N7
40V N-Channel MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS ON in a small package.
• Synchronous rectifier
• DC/DC converter
• A, 40 V RDS ON = 11 VGS = V RDS ON = 9 VGS = 10 V
• High performance trench technology for extremely low RDS ON
• High power and current handling capability
• Fast switching
• FLMP SO-8 package Enhanced thermal performance in industry-standard package size

Bottom-side

Drain Contact

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS VGSS ID

Parameter

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed

Note 1a

PD TJ, TSTG

Power Dissipation

Note 1a

Note 1b

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Note 1a
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDS4072N7

FDS4072N7
13’’

Fairchild Semiconductor Corporation

Ratings
40 ± 12 60 to +150

Tape width 12mm

Units

W °C
°C/W °C/W

Quantity 2500 units

FDS4072N7

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Drain-Source Avalanche Ratings Note 2

Drain-Source Avalanche Energy Single Pulse, VDD = 20V, ID=12.4 A

Drain-Source Avalanche Current
200 mJ

Off Characteristics

BVDSS

IDSS

Breakdown Voltage Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

IGSSF

Leakage, Forward

IGSSR

VGS = 0 V,

ID = 250 µA

ID = 250 µA, Referenced to 25°C

VDS = 32 V, VGS = 12 V, VGS = V ,

VGS = 0 V VDS = 0 V VDS = 0 V
40 38

V mV/°C
100 nA

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Datasheet ID: FDS4072N7 514306