FDS3682
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FDS3682 (pdf) |
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FDS3682 September 2002 FDS3682 N-Channel MOSFET 100V, 6A, • rDS ON = Typ. , VGS = 10V, ID = 6A • Qg tot = 19nC Typ. , VGS = 10V • Low Miller Charge • Low QRR Body Diode • Optimized efficiency at high frequencies • UIS Capability Single Pulse and Repetitive Pulse Formerly developmental type 82755 • DC/DC converters and Off-Line UPS • Distributed Power Architectures and VRMs • Primary Switch for 24V and 48V Systems • High Voltage Synchronous Rectifier • Direct Injection / Diesel Injection Systems • 42V Automotive Load Control • Electronic Valve Train Systems Branding Dash SO-8 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous TA = 25oC, VGS = 10V, = 50oC/W Continuous TA = 100oC, VGS = 10V, = 50oC/W Pulsed Single Pulse Avalanche Energy Note 1 Power dissipation Derate above 25oC TJ, TSTG Operating and Storage Temperature Thermal Characteristics Thermal Resistance, Junction to Ambient at 10 seconds Note 3 Thermal Resistance, Junction to Ambient at 1000 seconds Note 3 Thermal Resistance, Junction to Case Note 2 Package Marking and Ordering Information Device Marking FDS3682 Device FDS3682 Package SO-8 Reel Size 330mm Ratings 100 ±20 Figure 4 156 20 -55 to 150 Units V A mJ W mW/oC oC/W oC/W oC/W Tape Width 12mm Quantity 2500 units 2002 Fairchild Semiconductor Corporation FDS3682 Electrical Characteristics TA = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250µA, VGS = 0V VDS = 80V VGS = 0V TC = 150oC - VGS = ±20V Typ Max Units ±100 nA On Characteristics VGS TH Gate to Source Threshold Voltage rDS ON Drain to Source On Resistance VGS = VDS, ID = 250µA ID = 6A, VGS = 10V ID = 3A, VGS = 6V ID = 6A, VGS = 10V, TC = 150oC Dynamic Characteristics CISS COSS CRSS Qg TOT Qg TH Qgs Qgs2 Qgd VDS = 25V, VGS = 0V, f = 1MHz |
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