AON4705L
AON4705L Datasheet
AON4705L P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
| Part | Datasheet |
|---|---|
AON4705L |
AON4705L (pdf) |
| PDF Datasheet Preview |
|---|
| AON4705L P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode The AON4705L uses advanced trench technology to provide excellent RDS ON and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for buck converter applications. -RoHS Compliant -Halogen Free VDS V = -20V ID = -4A VGS = -4.5V RDS ON < VGS = -4.5V RDS ON < VGS = -2.5V RDS ON < VGS = -1.8V SCHOTTKY VKA V = 20V, IF = 1A, VF<0.5V 1A DFN 3x2 Top View Bottom Pin 1 A 18K A 27K S 36D G 45D Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current A TA=25°C TA=70°C Pulsed Drain Current B Continuous Forward Current A TA=25°C TA=70°C Pulsed Forward Current B Power Dissipation TA=25°C TA=70°C Junction and Storage Temperature Range TJ, TSTG Parameter Thermal Characteristics MOSFET Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A t 10s Steady-State Maximum Junction-to-Lead C Steady-State Thermal Characteristics Schottky Maximum Junction-to-Ambient A t 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Steady-State MOSFET -20 ±8 -4 -15 -55 to 150 Typ 51 88 28 66 95 40 Schottky |
| More datasheets: 2209-H | 2208-H | 2207-H | 2206-H | 2205-H | 2204-H | 2203-H | 2202-H | 16-216/S3W-AM1N2BY/3T | FQAF9N50 |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived AON4705L Datasheet file may be downloaded here without warranties.