FDS2170N7

FDS2170N7 Datasheet

FDS2170N7

Part	Datasheet
FDS2170N7	FDS2170N7 (pdf)

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FDS2170N7 December 2003 FDS2170N7 200V N-Channel MOSFET This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS ON in a small package. • Synchronous rectifier • DC/DC converter • A, 200 V. RDS ON = 128 VGS = 10 V • High performance trench technology for extremely low RDS ON • High power and current handling capability • Fast switching, low gate charge 26nC typical • FLMP SO-8 package Enhanced thermal performance in industry-standard package size Bottom-side Drain Contact Absolute Maximum Ratings TA=25oC unless otherwise noted Parameter VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a Power Dissipation for Single Operation Note 1a Note 1b TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1 Package Marking and Ordering Information Device Marking Device Reel Size FDS2170N7 FDS2170N7 13’’ Ratings 200 ± 20 to +150 Tape width 12mm Units V A W °C °C/W Quantity 2500 units Fairchild Semiconductor Corporation FDS2170N7 Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings WDSS Drain-Source Avalanche Energy Drain-Source Avalanche Current Single Pulse, VDD = 200 V, ID=10 A 400 mJ Off Characteristics BVDSS Breakdown Voltage IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF Leakage, Forward IGSSR VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 160 V, VGS = 20 V, VGS = V, VGS = 0 V VDS = 0 V VDS = 0 V mV/°C

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FDS2170N7

December 2003

FDS2170N7
200V N-Channel MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS ON in a small package.
• Synchronous rectifier
• DC/DC converter
• A, 200 V. RDS ON = 128 VGS = 10 V
• High performance trench technology for extremely
low RDS ON
• High power and current handling capability
• Fast switching, low gate charge 26nC typical
• FLMP SO-8 package Enhanced thermal
performance in industry-standard package size

Bottom-side

Drain Contact

Absolute Maximum Ratings TA=25oC unless otherwise noted

Parameter

VDSS VGSS ID

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed

Note 1a

Power Dissipation for Single Operation

Note 1a

Note 1b

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Note 1a Note 1
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDS2170N7

FDS2170N7
13’’

Ratings
200 ± 20 to +150

Tape width 12mm

Units

V A W °C
°C/W

Quantity 2500 units

Fairchild Semiconductor Corporation

FDS2170N7

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Drain-Source Avalanche Ratings

WDSS

Drain-Source Avalanche Energy

Drain-Source Avalanche Current

Single Pulse, VDD = 200 V, ID=10 A
400 mJ

Off Characteristics

BVDSS

Breakdown Voltage

IDSS

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

IGSSF

Leakage, Forward

IGSSR

VGS = 0 V, ID = 250 µA

ID = 250 µA, Referenced to 25°C

VDS = 160 V, VGS = 20 V, VGS = V,

VGS = 0 V VDS = 0 V VDS = 0 V
mV/°C

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Datasheet ID: FDS2170N7 514291