FDS2070N3

FDS2070N3 Datasheet

FDS2070N3

Part	Datasheet
FDS2070N3	FDS2070N3 (pdf)

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FDS2070N3 February 2004 FDS2070N3 150V N-Channel MOSFET This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS ON in a small package. • Synchronous rectifier • DC/DC converter • A, 150 V. RDS ON = 78 VGS = 10 V RDS ON = 88 VGS = V • High performance trench technology for extremely low RDS ON • High power and current handling capability • Fast switching, low gate charge 38nC typical • FLMP SO-8 package Enhanced thermal performance in industry-standard package size Bottom-side Drain Contact Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a Power Dissipation for Single Operation Note 1a Note 1b TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1 Package Marking and Ordering Information Device Marking Device Reel Size FDS2070N3 FDS2070N3 13’’ 2004 Fairchild Semiconductor Corporation Ratings 150 ± 20 30 to +150 Tape width 12mm 4 3 2 1 Units V A W °C °C/W Quantity 2500 units FDS2070N3 Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings WDSS IAR Drain-Source Avalanche Energy Drain-Source Avalanche Current Single Pulse, VDD = 150 V, ID= 10 A L = mH 440 mJ Off Characteristics BVDSS Breakdown Voltage IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSS Leakage VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 120 V, VGS = 0 V VGS = ± 20 V, VDS = 0 V mV/°C ±100 nA On Characteristics Note 2 VGS th

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FDS2070N3

February 2004

FDS2070N3
150V N-Channel MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS ON in a small package.
• Synchronous rectifier
• DC/DC converter
• A, 150 V. RDS ON = 78 VGS = 10 V RDS ON = 88 VGS = V
• High performance trench technology for extremely low RDS ON
• High power and current handling capability
• Fast switching, low gate charge 38nC typical
• FLMP SO-8 package Enhanced thermal performance in industry-standard package size

Bottom-side

Drain Contact

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS VGSS ID

Parameter

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed

Note 1a

Power Dissipation for Single Operation

Note 1a

Note 1b

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Note 1a Note 1
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDS2070N3

FDS2070N3
13’’
2004 Fairchild Semiconductor Corporation

Ratings
150 ± 20 30 to +150

Tape width 12mm
4 3 2 1

Units

V A W °C
°C/W

Quantity 2500 units

FDS2070N3

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Drain-Source Avalanche Ratings

WDSS IAR

Drain-Source Avalanche Energy Drain-Source Avalanche Current

Single Pulse, VDD = 150 V, ID= 10 A L = mH
440 mJ

Off Characteristics

BVDSS

Breakdown Voltage

IDSS

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

IGSS

Leakage

VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C

VDS = 120 V, VGS = 0 V VGS = ± 20 V, VDS = 0 V
mV/°C
±100 nA

On Characteristics Note 2

VGS th

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Datasheet ID: FDS2070N3 514288