BU508AFTBTU

BU508AFTBTU Datasheet


BU508AF

Part Datasheet
BU508AFTBTU BU508AFTBTU BU508AFTBTU (pdf)
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BU508AF

BU508AF

TV Horizontal Output Applications

TO-3PF
1.Base 2.Collector 3.Emitter

NPN Triple Diffused Planar Silicon Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted

Parameter

VCES VCEO VEBO IC ICP PC TJ TSTG

Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC *Collector Current Pulse Collector Dissipation TC=25°C Junction Temperature Storage Temperature

Value 1500 700
5 15 60 150 - 65 ~ 150

Units V A W °C °C

Electrical Characteristics TC=25°C unless otherwise noted

Parameter

Test Condition

VCEO sus * Collector-Emitter Sustaining Voltage

BVEBO

Emitter-Base Breakdown Voltage

ICES

Collector Cut-off Current

IEBO

Emitter Cut-off Current
* DC Current Gain

VCE sat
* Collector-Emitter Saturation Voltage

VBE sat
* Base-Emitter Saturation Voltage
* Pulse Test PW = 300µs, duty cycle = Pulsed

IC = 100mA, IB = 0 IE = 10mA, IC = 0 VCE = 1500V, VBE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 4.5A IC = 4.5A, IB = 2A IC = 4.5A, IB = 2A

Min. 700

Typ.

Max.

Units V mA
2002 Fairchild Semiconductor Corporation

Typical Characteristics

V = 5V CE
hFE, DC CURRENT GAIN

IC[A], COLLECTOR CURRENT

Figure Static Characteristic
10000 1000
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Datasheet ID: BU508AFTBTU 513537