BU508AF
Part | Datasheet |
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BU508AFTBTU (pdf) |
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BU508AF BU508AF TV Horizontal Output Applications TO-3PF 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter VCES VCEO VEBO IC ICP PC TJ TSTG Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC *Collector Current Pulse Collector Dissipation TC=25°C Junction Temperature Storage Temperature Value 1500 700 5 15 60 150 - 65 ~ 150 Units V A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition VCEO sus * Collector-Emitter Sustaining Voltage BVEBO Emitter-Base Breakdown Voltage ICES Collector Cut-off Current IEBO Emitter Cut-off Current * DC Current Gain VCE sat * Collector-Emitter Saturation Voltage VBE sat * Base-Emitter Saturation Voltage * Pulse Test PW = 300µs, duty cycle = Pulsed IC = 100mA, IB = 0 IE = 10mA, IC = 0 VCE = 1500V, VBE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 4.5A IC = 4.5A, IB = 2A IC = 4.5A, IB = 2A Min. 700 Typ. Max. Units V mA 2002 Fairchild Semiconductor Corporation Typical Characteristics V = 5V CE hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT Figure Static Characteristic 10000 1000 |
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