FDR8702H
FDR8702H Datasheet
FDR8702H
| Part | Datasheet |
|---|---|
FDR8702H |
FDR8702H (pdf) |
| PDF Datasheet Preview |
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| FDR8702H March 2003 FDR8702H 20V N & P-Channel MOSFET These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. DC/DC converter Power management • N channel A, 20V RDS ON = 38 VGS = V RDS ON = 54 VGS = V • P channel A, RDS ON = 80 VGS = V RDS ON = 110 VGS = V • Fast switching speed. • High performance trench technology for extremely low RDS ON SuperSOT -8 G1 Absolute Maximum Ratings TA=25oC unless otherwise noted Parameter VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Continuous Note 1a Pulsed Power Dissipation for Single Operation Note 1a Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1b Note 1 Package Marking and Ordering Information Device Marking Device Reel Size FDR8702H 13’’ Ratings Q1 N 20 ±12 to +150 Units W °C °C/W Tape width 12mm Quantity 2500 units Fairchild Semiconductor Corp. FDR8702H Electrical CharacteristicsTA = 25°C unless otherwise noted Parameter Test Conditions Q Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSS Gate-Body Leakage VGS = 0 V, ID = 250 µA VGS = 0 V, ID = µA ID = 250 µA, Ref to 25°C ID = µA, Ref to 25°C VDS = 16 V, VGS = 0 V VDS = 16 V, VGS = 0 V VGS = ±12 V, VDS = 0 V VGS = ±8 V, VDS = 0 V On Characteristics VGS th Gate Threshold Voltage |
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