FDR8508P
FDR8508P Datasheet
FDR8508P
| Part | Datasheet |
|---|---|
FDR8508P |
FDR8508P (pdf) |
| PDF Datasheet Preview |
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| FDR8508P March 1999 FDR8508P Dual P-Channel, Logic Level, PowerTrenchTM MOSFET These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. Load switch DC/DC converter Motor driving Features A, -30 V. RDS ON = VGS = -10V RDS ON = VGS = -4.5V. Low gate charge. 8nC typical . High performance trench technology for extremely low RDS ON High power and current handling capability. Small footprint 38% smaller than a standard SO-8 ; low profile package 1 mm thick power handling capability similar to SO-8. SuperSOT-8 pin #1 G1 Absolute Maximum Ratings TA = 25°C unless otherwise noted Parameter VDSS VGSS ID PD TJ, Tstg Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous Note 1a - Pulsed Power Dissipation Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1 Package Marking and Ordering Information Device Marking Device Reel Size FDR8508P 13” 4 3 2 1 FDR8508P -30 ±20 -3 -20 -55 to +150 Units W °C °C/W °C/W Tape Width 12mm Quantity 3000 units Fairchild Semiconductor Corporation FDR8508P Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage BVDSS/ TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage Current IGSSR Gate-Body Leakage Current VGS = 0 V, ID = -250 µA ID = -250 µA, Referenced to 25°C VDS = -24 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V -30 24 V mV/°C 100 nA -100 nA On Characteristics Note 2 VGS th Gate Threshold Voltage |
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