FQPF10N60CF

FQPF10N60CF Datasheet

FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET

Part	Datasheet
FQPF10N60CF	FQPF10N60CF (pdf)

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FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET February 2007 FRFET TM • 9A, 600V, RDS on = = 10 V • Low gate charge typical 44 nC • Low Crss typical 18 pF • Fast switching • 100% avalanche tested • Improved dv/dt capability These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. TO-220 FQP Series Absolute Maximum Ratings Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current - Continuous TC = 25°C - Continuous TC = 100°C - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Note 1 Note 2 Note 1 Note 1 Note 3 Power Dissipation TC = 25°C - Derate above 25°C TJ, TSTG Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, from case for 5 seconds * Drain current limited by maximum junction temperature. Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient TO-220F FQPF Series FQP10N60CF FQPF10N60CF ± 30 -55 to +150 Units V A V mJ A mJ V/ns W/°C °C °C Package Marking and Ordering Information Device Marking FQP10N60CF FQPF10N60CF Device FQP10N60CF FQPF10N60CF Package TO-220 TO-220F Reel Size Tape Width Quantity Electrical Characteristics TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125°C Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V On Characteristics VGS th RDS on Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 µA VGS = 10 V, ID = A VDS = 40 V, ID = A Note 4 Dynamic Characteristics Ciss Coss Input Capacitance Output Capacitance VDS = 25 V, VGS = 0 V, f = MHz Crss Switching Characteristics

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FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET

FQP10N60CF / FQPF10N60CF
600V N-Channel MOSFET

February 2007

FRFET TM
• 9A, 600V, RDS on = = 10 V
• Low gate charge typical 44 nC
• Low Crss typical 18 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

TO-220

FQP Series

Absolute Maximum Ratings

Parameter

VDSS ID

IDM VGSS EAS IAR EAR dv/dt

Drain-Source Voltage

Drain Current Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C - Pulsed

Gate-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Note 1

Note 2 Note 1 Note 1 Note 3

Power Dissipation TC = 25°C
- Derate above 25°C

TJ, TSTG

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes,
from case for 5 seconds
* Drain current limited by maximum junction temperature.

Thermal Characteristics

Parameter

Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient

TO-220F

FQPF Series

FQP10N60CF FQPF10N60CF
± 30
-55 to +150

Units

V A V mJ A mJ V/ns W/°C °C °C
Package Marking and Ordering Information

Device Marking

FQP10N60CF FQPF10N60CF

Device

FQP10N60CF FQPF10N60CF

Package

TO-220 TO-220F

Reel Size

Tape Width

Quantity

Electrical Characteristics TC = 25°C unless otherwise noted

Parameter

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS IDSS

IGSSF IGSSR

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature Coefficient

VGS = 0 V, ID = 250 µA

ID = 250 µA, Referenced to 25°C

Zero Gate Voltage Drain Current

VDS = 600 V, VGS = 0 V

VDS = 480 V, TC = 125°C

Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V

On Characteristics

VGS th RDS on

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transconductance

VDS = VGS, ID = 250 µA

VGS = 10 V, ID = A

VDS = 40 V, ID = A

Note 4

Dynamic Characteristics

Ciss Coss

Input Capacitance Output Capacitance

VDS = 25 V, VGS = 0 V,
f = MHz

Crss

Switching Characteristics

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Datasheet ID: FQPF10N60CF 515284