FDR842P

FDR842P Datasheet

FDR842P

Part	Datasheet
FDR842P	FDR842P (pdf)

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FDR842P December 2001 FDR842P P-Channel 1.8V Specified MOSFET This P-Channel specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. • Power management • Load switch • Battery protection • A, V RDS ON = 9 VGS = V RDS ON = 12 VGS = V RDS ON = 16 VGS = V • Fast switching speed • High performance trench technology for extremely low RDS ON • High power and current handling capability SuperSOTTM -8 Absolute Maximum Ratings TA=25oC unless otherwise noted Parameter VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a Power Dissipation for Single Operation Note 1a Note 1b TJ, TSTG Note 1c Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1 Package Marking and Ordering Information Device Marking Device Reel Size FDR842P FDR842P 13’’ Ratings ±8 to +150 70 20 Tape width 12mm Units °C/W °C/W Quantity 2500 units Fairchild Semiconductor Corporation FDR842P Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Breakdown Voltage IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF Leakage, Forward IGSSR VGS = 0 V, ID = µA ID = µA, Referenced to 25°C VDS = V, VGS = 8 V, VGS = V, VGS = 0 V VDS = 0 V VDS = 0 V On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient Static

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FDR842P

December 2001

FDR842P

P-Channel 1.8V Specified MOSFET

This P-Channel specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
• Power management
• Load switch
• Battery protection
• A, V RDS ON = 9 VGS = V RDS ON = 12 VGS = V RDS ON = 16 VGS = V
• Fast switching speed
• High performance trench technology for extremely low RDS ON
• High power and current handling capability

SuperSOTTM -8

Absolute Maximum Ratings TA=25oC unless otherwise noted

Parameter

VDSS VGSS ID

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed

Note 1a

Power Dissipation for Single Operation

Note 1a

Note 1b

TJ, TSTG

Note 1c

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Note 1a Note 1
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDR842P

FDR842P
13’’

Ratings
±8 to +150
70 20

Tape width 12mm

Units
°C/W °C/W

Quantity 2500 units

Fairchild Semiconductor Corporation

FDR842P

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

Breakdown Voltage

IDSS

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

IGSSF

Leakage, Forward

IGSSR

VGS = 0 V,

ID = µA

ID = µA, Referenced to 25°C

VDS = V, VGS = 8 V, VGS = V,

VGS = 0 V VDS = 0 V VDS = 0 V

On Characteristics Note 2

VGS th

Gate Threshold Voltage

RDS on

Gate Threshold Voltage Temperature Coefficient

Static

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Datasheet ID: FDR842P 514282