FDR8305N
FDR8305N Datasheet
FDR8305N
| Part | Datasheet |
|---|---|
FDR8305N |
FDR8305N (pdf) |
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| FDR8305N November 1999 FDR8305N Dual N-Channel 2.5V Specified MOSFET These N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. • Load switch • Motor driving • Power Management • A, 20 V. RDS ON = VGS = V RDS ON = VGS = V. • Low gate charge 16.2nC typical . • Fast switching speed. • High performance trench technology for extremely low RDS ON . • Small footprint 38% smaller than a standard SO-8 ;low profile package 1 mm thick power handling capability similar to SO-8. D2 D1 SuperSOT TM-8 S1 G1 Absolute Maximum Ratings TA = 25°C unless otherwise noted Parameter VDSS VGSS ID PD TJ, Tstg Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous Note 1a - Pulsed Power Dissipation for Single Operation Note 1a Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1 Package Marking and Ordering Information Device Marking Device Reel Size FDR8305N 13’’ 4 3 2 1 Ratings 20 ±8 20 -55 to +150 Units W °C °C/W °C/W Tape Width 12mm Quantity 3000 units Fairchild Semiconductor Corporation FDR8305N Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage Current, Forward IGSSR On Characteristics Note 2 VGS th Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 16 V, VGS = 0 V VGS = 8 V, VDS = 0 V VGS = -8 V, VDS = 0 V VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C RDS on ID on gFS Static Drain-Source On-Resistance |
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