FDR6580
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FDR6580 (pdf) |
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FDR6580 April 1999 ADVANCE INFORMATION FDR6580 N-Chennal 2.5V Specified PowerTrenchTM MOSFET This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Load switch Motor driving Power Management 11 A, 20 V. RDS ON = VGS = V RDS ON = VGS = V. Low gate charge. High performance trench technology for extremely low RDS ON . Small footprint 38% smaller than a standard SO-8 low profile package 1 mm thick power handling capability similar to SO-8. SuperSOT -8 Absolute Maximum Ratings TA = 25°C unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Single Operation Note 1a Note 1a Note 1b Note 1c TJ, Tstg Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1 Package Outlines and Ordering Information Device Marking Device Reel Size FDR6580 13’’ Ratings 20 ±8 11 50 -55 to +150 70 20 Tape Width 12mm Units °C/W °C/W Quantity 3000 units Fairchild Semiconductor Corporation FDR6580 Electrical Characteristics TA=25oC unless otherwise noted Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA IDSS Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V IGSSF Gate-Body Leakage, Forward VGS = 8 V, VDS = 0 V IGSSR VGS = -8 V, VDS = 0 V ON CHARACTERISTICS Note 2 VGS TH Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS ON Static Drain-Source On-Resistance VGS = V, ID = 11 A VGS = V, ID = A ID ON On-State Drain Current VGS = V, VDS = 5 V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward |
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